Efficiency improvement of GaN-B ased light-emitting diode prepared on GaN nanorod template

Cheng-Huang Kuo; L. C. Chang; C. W. Kuo; G. C. Chi

doi:10.1109/LPT.2009.2038595

Efficiency improvement of GaN-B ased light-emitting diode prepared on GaN nanorod template

Cheng-Huang Kuo, L. C. Chang, C. W. Kuo, G. C. Chi

照明與能源光電研究所

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

We demonstrated the formation of GaN-based nanorod (NR) structure by using self-assemble Ni nanoislands as the etching mask. It was found that crystal quality of the GaN epilayer prepared on an NR GaN template was significantly better than that prepared with a conventional low-temperature GaN nucleation layer. With the NR GaN template, it was found that 20-mA light-emitting diode (LED) output power can be enhanced by 39.8%, as compared to the conventional LED.

原文	English
文章編號	5378548
頁（從 - 到）	257-259
頁數	3
期刊	IEEE Photonics Technology Letters
卷	22
發行號	4
DOIs	https://doi.org/10.1109/LPT.2009.2038595
出版狀態	Published - 15 2月 2010

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10.1109/LPT.2009.2038595

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AU - Chi, G. C.

PY - 2010/2/15

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AB - We demonstrated the formation of GaN-based nanorod (NR) structure by using self-assemble Ni nanoislands as the etching mask. It was found that crystal quality of the GaN epilayer prepared on an NR GaN template was significantly better than that prepared with a conventional low-temperature GaN nucleation layer. With the NR GaN template, it was found that 20-mA light-emitting diode (LED) output power can be enhanced by 39.8%, as compared to the conventional LED.

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KW - Light-emitting diode (led)

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Efficiency improvement of GaN-B ased light-emitting diode prepared on GaN nanorod template

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