摘要
The enhanced conversion efficiency of the InGaP/GaAs dual-junction solar cell was demonstrated utilizing broad-band and omnidirectional antireflection nanorod arrays. The nanorod arrays were fabricated by self-assembled Ni clusters, followed by inductively-coupled-plasma reactive ion etching. The conversion efficiency measured under one-sun air mass 1.5 global illuminations at room temperature was improved by 10.8%. The light absorption efficiencies of the top InGaP and bottom GaAs cells were also studied under the influence of nanorod arrays. The enhanced absorption efficiency was mostly contributed from the short wavelength absorption by top cell. Surface nanorod arrays served not only as broad-band omnidirectional antireflection layers but also scattering sources. The structure can be further optimized to obtain the maximum conversion efficiency
| 原文 | English |
|---|---|
| 頁（從 - 到） | 10729-10732 |
| 頁數 | 4 |
| 期刊 | Journal of Nanoscience and Nanotechnology |
| 卷 | 11 |
| 發行號 | 12 |
| DOIs | |
| 出版狀態 | Published - 1 12月 2011 |