Efficiency droop of nitride-based light-emitting diodes

研究成果: Chapter同行評審

3 引文 斯高帕斯(Scopus)

摘要

Efficiency droop of nitride-based light emitting diodes (LED) was intensively studied for high-power applications. The origin of droops was attributed to many root causes, for example, carrier leakage, internal piezo-polarization field, Auger recombination, carrier delocalization, and thermal effects. The physical origins were modeled and visualized by various techniques, which will be described in detail in this chapter. Many droop alleviation strategies were proposed by an epitaxial layer structure optimization and device structure innovation, where many of them were widely applied in current commercial products.

原文English
主出版物標題Handbook of Solid-State Lighting and LEDs
發行者CRC Press
頁面99-122
頁數24
ISBN(電子)9781498741422
ISBN(列印)9781498741415
出版狀態Published - 12 6月 2017

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