Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

Cheng-Huang Kuo; Y. K. Fu; G. C. Chi; Shoou Jinn Chang

doi:10.1109/JQE.2009.2031253

Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

Cheng-Huang Kuo, Y. K. Fu, G. C. Chi, Shoou Jinn Chang

照明與能源光電研究所

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

GaN-based asymmetric two-step light-emitting diodes (LEDs) with a low indium content (LIn) InGaN shallow step was proposed and fabricated. It was found the LIn-InGaN shallow step can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In_0.27Ga_0.73N layer. By inserting an In_0.08Ga_0.92N shallow step, it was found that we can enhance LED output power by a factor of 2.27 with an injection current of 20 mA.

原文	English
頁（從 - 到）	391-395
頁數	5
期刊	IEEE Journal of Quantum Electronics
卷	46
發行號	3
DOIs	https://doi.org/10.1109/JQE.2009.2031253
出版狀態	Published - 3月 2010

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@article{ff4fb0f6cc4d4f0f9daee9424bf5a086,

title = "Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step",

abstract = "GaN-based asymmetric two-step light-emitting diodes (LEDs) with a low indium content (LIn) InGaN shallow step was proposed and fabricated. It was found the LIn-InGaN shallow step can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. By inserting an In0.08Ga0.92N shallow step, it was found that we can enhance LED output power by a factor of 2.27 with an injection current of 20 mA.",

keywords = "InGaN-GaN, light-emitting diodes (LEDs), localization, low indium composition",

author = "Cheng-Huang Kuo and Fu, {Y. K.} and Chi, {G. C.} and Chang, {Shoou Jinn}",

year = "2010",

month = mar,

doi = "10.1109/JQE.2009.2031253",

language = "English",

volume = "46",

pages = "391--395",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

AU - Kuo, Cheng-Huang

AU - Fu, Y. K.

AU - Chi, G. C.

AU - Chang, Shoou Jinn

PY - 2010/3

Y1 - 2010/3

N2 - GaN-based asymmetric two-step light-emitting diodes (LEDs) with a low indium content (LIn) InGaN shallow step was proposed and fabricated. It was found the LIn-InGaN shallow step can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. By inserting an In0.08Ga0.92N shallow step, it was found that we can enhance LED output power by a factor of 2.27 with an injection current of 20 mA.

AB - GaN-based asymmetric two-step light-emitting diodes (LEDs) with a low indium content (LIn) InGaN shallow step was proposed and fabricated. It was found the LIn-InGaN shallow step can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. By inserting an In0.08Ga0.92N shallow step, it was found that we can enhance LED output power by a factor of 2.27 with an injection current of 20 mA.

KW - InGaN-GaN

KW - light-emitting diodes (LEDs)

KW - localization

KW - low indium composition

UR - http://www.scopus.com/inward/record.url?scp=85008046696&partnerID=8YFLogxK

U2 - 10.1109/JQE.2009.2031253

DO - 10.1109/JQE.2009.2031253

M3 - Article

AN - SCOPUS:85008046696

SN - 0018-9197

VL - 46

SP - 391

EP - 395

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 3

ER -

Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

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