@inproceedings{88794f8c222945e5989aaec5685d0f95,
title = "Efficiency and droop improvement in InGaN/GaN lightemitting diodes by selectively carrier-distribution manipulation",
abstract = "Efficiency and droop behavior in InGaN/GaN light-emitting diodes are both improved by selectively-graded-composition multi-quantum barriers (SGQB). Simulation results show that SGQB could moderately improve the hole transport in active region. In the meantime, spatial distribution overlap between electrons and holes in active region could be also well-considered. Therefore, the radiative recombination of SGQB LED is more efficient than that of conventional LED. The overall efficiency and droop behavior are simultaneously improved in SGQB LED, at both low and high current density.",
author = "Lin, {Da Wei} and Wang, {Chao Hsun} and Chang, {Shih Pang} and Ku, {Pu Hsih} and Yu-Pin Lan and Hao-Chung Kuo and Tien-chang Lu and Wang, {Shing Chung} and Chang, {Chun Yen}",
year = "2012",
month = dec,
day = "1",
doi = "10.1364/CLEO_AT.2012.JTh2A.73",
language = "English",
isbn = "9781557529435",
series = "Optics InfoBase Conference Papers",
booktitle = "Quantum Electronics and Laser Science Conference, QELS 2012",
note = "Quantum Electronics and Laser Science Conference, QELS 2012 ; Conference date: 06-05-2012 Through 11-05-2012",
}