Efficiency and droop improvement in green InGaN/GaN light-emitting diodes on GaN nanorods template with SiO2 nanomasks

Da Wei Lin*, Chia Yu Lee, Che Yu Liu, Hau Vei Han, Yu-Pin Lan, Chien-Chung Lin, Gou Chung Chi, Hao-Chung Kuo

*此作品的通信作者

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

This study presents the green InGaN/GaN multiple quantum wells light-emitting diodes (LEDs) grown on a GaN nanorods template with SiO 2 nanomasks by metal-organic chemical vapor deposition. By nanoscale epitaxial lateral overgrowth, microscale air voids were formed between nanorods and the threading dislocations were efficiently suppressed. The electroluminescence measurement reveals that the LEDs on nanorods template with SiO2 nanomasks suffer less quantum-confined Stark effect and exhibit higher light output power and lower efficiency droop at a high injection current as compared with conventional LEDs.

原文English
文章編號233104
頁數4
期刊Applied Physics Letters
101
發行號23
DOIs
出版狀態Published - 3 12月 2012

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