Efficiency and droop improvement in GaN-based high-voltage flip chip LEDs

Yen Chih Chiang, Bing Cheng Lin, Kuo Ju Chen, Sheng Huan Chiu, Chien-Chung Lin*, Po-Tsung Lee, Min Hsiung Shih, Hao-Chung Kuo

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

The GaN-based high-voltage flip chip light-emitting diode (HVFC-LED) is designed and developed for the purpose of efficiency enhancement. In our design, the distributed Bragg reflector (DBR) is deposited at the bonded substrate to increase the light extraction. After the flip chip process, the general current-voltage characteristics between the flip chip sample and the traditional sample are essentially the same. With the help of great thermal conductive silicon substrate and the bottom DBR, the HVFC-LED is able to enhance the power by 37.1% when compared to the traditional high-voltage LEDs. The wall-plug efficiencies of the HVFC-LED also show good droop reduction as high as 9.9% compared to the traditional devices.

原文English
文章編號385257
頁數7
期刊International Journal of Photoenergy
2014
DOIs
出版狀態Published - 2014

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