Effects of wafer thermostability and wafer-holding materials on optical loss in GaAs annealing

Yew-Chuhg Wu*, R. S. Feigelson, R. K. Route, D. Zheng, L. A. Gordon, M. M. Fejer, R. L. Byer

*此作品的通信作者

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

A periodic structure of bonded GaAs wafers has been proposed for quasi-phase-matched second-harmonic generation. However, current bonding processes used to fabricate these structures often lead to unacceptably high optical losses. When commercial semi-insulating GaAs wafers were bonded at 850°C, increases in the free-hole concentration (thermal conversion) were found to be a major cause of excess optical loss. This conversion depended on both the GaAs source and the materials composing the sample holder. We found that quartz and sapphire could not be used in contact with GaAs wafers because they stuck during the bonding process. On the other hand As-charged graphite holders did not stick and worked well under our bonding conditions.

原文English
頁(從 - 到)5552-5554
頁數3
期刊Journal of Applied Physics
83
發行號10
DOIs
出版狀態Published - 15 5月 1998

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