Effects of vanadium incorporation on the electron schottky barrier height reduction of NiGe/Ge

Yi Ju Chen, Bing-Yue Tsui

    研究成果: Conference contribution同行評審

    摘要

    Effects of vanadium incorporation on the electron Schottky barrier height reduction ofNiGe/Ge is investigated. The best results achieved in this work is 70 meV electron Schottky barrier height reduction by depositing vanadium layer followed by Ar ion bombardment.

    原文English
    主出版物標題EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
    發行者Institute of Electrical and Electronics Engineers Inc.
    頁面1-2
    頁數2
    ISBN(電子)9781538629079
    DOIs
    出版狀態Published - 1 12月 2017
    事件13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Hsinchu, Taiwan
    持續時間: 18 10月 201720 10月 2017

    出版系列

    名字EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
    2017-January

    Conference

    Conference13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
    國家/地區Taiwan
    城市Hsinchu
    期間18/10/1720/10/17

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