@inproceedings{f4d153e36f0d440cbfceafdbccdab42e,
title = "Effects of vanadium incorporation on the electron schottky barrier height reduction of NiGe/Ge",
abstract = "Effects of vanadium incorporation on the electron Schottky barrier height reduction ofNiGe/Ge is investigated. The best results achieved in this work is 70 meV electron Schottky barrier height reduction by depositing vanadium layer followed by Ar ion bombardment.",
keywords = "Germanium, Schottky barrier height, Vanadium",
author = "Chen, {Yi Ju} and Bing-Yue Tsui",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 ; Conference date: 18-10-2017 Through 20-10-2017",
year = "2017",
month = dec,
day = "1",
doi = "10.1109/EDSSC.2017.8126554",
language = "English",
series = "EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--2",
booktitle = "EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits",
address = "美國",
}