The thermal effects of Ni/Ta/n-GaN Schottky diodes have been investigated for the first time using current-voltage, X-ray photoemission spectroscopy and Auger electron spectroscopy (AES) methods. Their barrier height is found to increase monotonously with increasing annealing temperature up to 800°C. Preliminary results indicate that when a Ta intermediate layer is added into the Ni/GaN diodes, it can prevent the metal-semiconductor interdiffusion and Ni accumulation adjacent to GaN substrate to a large extent so that a more thermally stable device can be obtained.
|頁（從 - 到）||L255-L258|
|期刊||Japanese Journal of Applied Physics, Part 2: Letters|
|出版狀態||Published - 15 3月 2001|