Effects of thermal annealing on Ni/Ta/n-GaN Schottky diodes

Gin Liang Chen; Fu Chin Chang; Wang Cheng Chung; Bohr Ran Huang; Wen Hsiung Chen; Ming Chih Lee; Wei-Kuo Chen

doi:10.1143/JJAP.40.L255

Effects of thermal annealing on Ni/Ta/n-GaN Schottky diodes

Gin Liang Chen^*, Fu Chin Chang, Wang Cheng Chung, Bohr Ran Huang, Wen Hsiung Chen, Ming Chih Lee, Wei-Kuo Chen

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

The thermal effects of Ni/Ta/n-GaN Schottky diodes have been investigated for the first time using current-voltage, X-ray photoemission spectroscopy and Auger electron spectroscopy (AES) methods. Their barrier height is found to increase monotonously with increasing annealing temperature up to 800°C. Preliminary results indicate that when a Ta intermediate layer is added into the Ni/GaN diodes, it can prevent the metal-semiconductor interdiffusion and Ni accumulation adjacent to GaN substrate to a large extent so that a more thermally stable device can be obtained.

原文	English
頁（從 - 到）	L255-L258
期刊	Japanese Journal of Applied Physics, Part 2: Letters
卷	40
發行號	3 B
DOIs	https://doi.org/10.1143/JJAP.40.L255
出版狀態	Published - 15 3月 2001

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@article{1d8e14626652404d9ee305e465d8f9a5,

title = "Effects of thermal annealing on Ni/Ta/n-GaN Schottky diodes",

abstract = "The thermal effects of Ni/Ta/n-GaN Schottky diodes have been investigated for the first time using current-voltage, X-ray photoemission spectroscopy and Auger electron spectroscopy (AES) methods. Their barrier height is found to increase monotonously with increasing annealing temperature up to 800°C. Preliminary results indicate that when a Ta intermediate layer is added into the Ni/GaN diodes, it can prevent the metal-semiconductor interdiffusion and Ni accumulation adjacent to GaN substrate to a large extent so that a more thermally stable device can be obtained.",

keywords = "Auger electron spectroscopy, Ni/Ta/n-GaN",

author = "Chen, {Gin Liang} and Chang, {Fu Chin} and Chung, {Wang Cheng} and Huang, {Bohr Ran} and Chen, {Wen Hsiung} and Lee, {Ming Chih} and Wei-Kuo Chen",

year = "2001",

month = mar,

day = "15",

doi = "10.1143/JJAP.40.L255",

language = "English",

volume = "40",

pages = "L255--L258",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "3 B",

}

TY - JOUR

T1 - Effects of thermal annealing on Ni/Ta/n-GaN Schottky diodes

AU - Chen, Gin Liang

AU - Chang, Fu Chin

AU - Chung, Wang Cheng

AU - Huang, Bohr Ran

AU - Chen, Wen Hsiung

AU - Lee, Ming Chih

AU - Chen, Wei-Kuo

PY - 2001/3/15

Y1 - 2001/3/15

N2 - The thermal effects of Ni/Ta/n-GaN Schottky diodes have been investigated for the first time using current-voltage, X-ray photoemission spectroscopy and Auger electron spectroscopy (AES) methods. Their barrier height is found to increase monotonously with increasing annealing temperature up to 800°C. Preliminary results indicate that when a Ta intermediate layer is added into the Ni/GaN diodes, it can prevent the metal-semiconductor interdiffusion and Ni accumulation adjacent to GaN substrate to a large extent so that a more thermally stable device can be obtained.

AB - The thermal effects of Ni/Ta/n-GaN Schottky diodes have been investigated for the first time using current-voltage, X-ray photoemission spectroscopy and Auger electron spectroscopy (AES) methods. Their barrier height is found to increase monotonously with increasing annealing temperature up to 800°C. Preliminary results indicate that when a Ta intermediate layer is added into the Ni/GaN diodes, it can prevent the metal-semiconductor interdiffusion and Ni accumulation adjacent to GaN substrate to a large extent so that a more thermally stable device can be obtained.

KW - Auger electron spectroscopy

KW - Ni/Ta/n-GaN

UR - http://www.scopus.com/inward/record.url?scp=0035867893&partnerID=8YFLogxK

U2 - 10.1143/JJAP.40.L255

DO - 10.1143/JJAP.40.L255

M3 - Article

AN - SCOPUS:0035867893

SN - 0021-4922

VL - 40

SP - L255-L258

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 3 B

ER -

Effects of thermal annealing on Ni/Ta/n-GaN Schottky diodes

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