Effects of thermal annealing on Ni/Ta/n-GaN Schottky diodes

Gin Liang Chen*, Fu Chin Chang, Wang Cheng Chung, Bohr Ran Huang, Wen Hsiung Chen, Ming Chih Lee, Wei-Kuo Chen


研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)


The thermal effects of Ni/Ta/n-GaN Schottky diodes have been investigated for the first time using current-voltage, X-ray photoemission spectroscopy and Auger electron spectroscopy (AES) methods. Their barrier height is found to increase monotonously with increasing annealing temperature up to 800°C. Preliminary results indicate that when a Ta intermediate layer is added into the Ni/GaN diodes, it can prevent the metal-semiconductor interdiffusion and Ni accumulation adjacent to GaN substrate to a large extent so that a more thermally stable device can be obtained.

頁(從 - 到)L255-L258
期刊Japanese Journal of Applied Physics, Part 2: Letters
發行號3 B
出版狀態Published - 15 3月 2001


深入研究「Effects of thermal annealing on Ni/Ta/n-GaN Schottky diodes」主題。共同形成了獨特的指紋。