Effects of the doping levels on the characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures

M. H. Liu*, Y. H. Wang, M. P. Houng, Jenn-Fang Chen, A. Y. Cho

*此作品的通信作者

研究成果: Article同行評審

摘要

The effects of conservation of in-plane momentum and doping levels on the low-temperature characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures are investigated. A three-band k · p model incorporating the coupling effects among electrons, heavy holes and light holes is used to calculate the tunneling current-voltage characteristics. It is found that the kink and the small peaks in the low-temperature characteristics are results of the conservation of in-plane momentum. With a 30 Å-thick InAs well, the low-temperature characteristics change from the ones with a shoulder at low doping levels to the ones with a kink at high doping levels. In addition, the peak current density decreases at high doping levels. With a 120 Å-thick InAs well, the peak current density increases with increasing doping levels. Besides, the small peaks at low and medium voltages and the main current peak become more significant at high doping levels. The detailed carrier transport can be interpreted with the tunneling factors and the conservation of the in-plane momentum.

原文English
頁(從 - 到)202-205
頁數4
期刊Physica Scripta T
69
DOIs
出版狀態Published - 1997

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