Effects of substrate orientation on the photovoltaic performance of InGaAs solar cells

Ming Chun Tseng; Ray-Hua Horng; Snin Nan Lin; Dong Sing Wuu; Chih Hung Wu; Chih Kang Chao; Hsin Her Yu

doi:10.1109/TED.2010.2052397

Effects of substrate orientation on the photovoltaic performance of InGaAs solar cells

Ming Chun Tseng^*, Ray-Hua Horng, Snin Nan Lin, Dong Sing Wuu, Chih Hung Wu, Chih Kang Chao, Hsin Her Yu

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電子研究所

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

In_0.16Ga_0.84As solar cells grown on GaAs substrates with different miscut angles via metalorganic chemical vapor deposition were utilized to study the effect of substrate orientation on solar cell efficiency. A p-n In_0.16Ga_0.84As solar cell grown on a 2°-off GaAs substrate exhibited better conversion efficiency than one grown on a 15°-off GaAs substrate. The poor performance of the 15°-off In _0.16Ga_0.84As solar cell could be attributed to the formation of high-density misfit dislocations through strain relaxation, thereby reducing the minority carrier lifetime. The conversion efficiency of a 15°-off In_0.16Ga_0.84As solar cell was improved using a p-i-n structure. Using the p-i-n structure design, a 15°-off In _0.16Ga_0.84As solar cell showed conversion efficiency close to or even better than that of a 2°-off In_0.16Ga _0.84As solar cell with the same structure.

原文	English
文章編號	5508385
頁（從 - 到）	2138-2143
頁數	6
期刊	IEEE Transactions on Electron Devices
卷	57
發行號	9
DOIs	https://doi.org/10.1109/TED.2010.2052397
出版狀態	Published - 1 9月 2010

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title = "Effects of substrate orientation on the photovoltaic performance of InGaAs solar cells",

abstract = "In0.16Ga0.84As solar cells grown on GaAs substrates with different miscut angles via metalorganic chemical vapor deposition were utilized to study the effect of substrate orientation on solar cell efficiency. A p-n In0.16Ga0.84As solar cell grown on a 2°-off GaAs substrate exhibited better conversion efficiency than one grown on a 15°-off GaAs substrate. The poor performance of the 15°-off In 0.16Ga0.84As solar cell could be attributed to the formation of high-density misfit dislocations through strain relaxation, thereby reducing the minority carrier lifetime. The conversion efficiency of a 15°-off In0.16Ga0.84As solar cell was improved using a p-i-n structure. Using the p-i-n structure design, a 15°-off In 0.16Ga0.84As solar cell showed conversion efficiency close to or even better than that of a 2°-off In0.16Ga 0.84As solar cell with the same structure.",

keywords = "InGaAs solar cells, miscut angles, p-i-n structure",

author = "Tseng, {Ming Chun} and Ray-Hua Horng and Lin, {Snin Nan} and Wuu, {Dong Sing} and Wu, {Chih Hung} and Chao, {Chih Kang} and Yu, {Hsin Her}",

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T1 - Effects of substrate orientation on the photovoltaic performance of InGaAs solar cells

AU - Tseng, Ming Chun

AU - Horng, Ray-Hua

AU - Lin, Snin Nan

AU - Wuu, Dong Sing

AU - Wu, Chih Hung

AU - Chao, Chih Kang

AU - Yu, Hsin Her

PY - 2010/9/1

Y1 - 2010/9/1

N2 - In0.16Ga0.84As solar cells grown on GaAs substrates with different miscut angles via metalorganic chemical vapor deposition were utilized to study the effect of substrate orientation on solar cell efficiency. A p-n In0.16Ga0.84As solar cell grown on a 2°-off GaAs substrate exhibited better conversion efficiency than one grown on a 15°-off GaAs substrate. The poor performance of the 15°-off In 0.16Ga0.84As solar cell could be attributed to the formation of high-density misfit dislocations through strain relaxation, thereby reducing the minority carrier lifetime. The conversion efficiency of a 15°-off In0.16Ga0.84As solar cell was improved using a p-i-n structure. Using the p-i-n structure design, a 15°-off In 0.16Ga0.84As solar cell showed conversion efficiency close to or even better than that of a 2°-off In0.16Ga 0.84As solar cell with the same structure.

AB - In0.16Ga0.84As solar cells grown on GaAs substrates with different miscut angles via metalorganic chemical vapor deposition were utilized to study the effect of substrate orientation on solar cell efficiency. A p-n In0.16Ga0.84As solar cell grown on a 2°-off GaAs substrate exhibited better conversion efficiency than one grown on a 15°-off GaAs substrate. The poor performance of the 15°-off In 0.16Ga0.84As solar cell could be attributed to the formation of high-density misfit dislocations through strain relaxation, thereby reducing the minority carrier lifetime. The conversion efficiency of a 15°-off In0.16Ga0.84As solar cell was improved using a p-i-n structure. Using the p-i-n structure design, a 15°-off In 0.16Ga0.84As solar cell showed conversion efficiency close to or even better than that of a 2°-off In0.16Ga 0.84As solar cell with the same structure.

KW - InGaAs solar cells

KW - miscut angles

KW - p-i-n structure

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Effects of substrate orientation on the photovoltaic performance of InGaAs solar cells

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