Effects of strained InGaN interlayer on contact resistance between p-GaN and indium tin oxide

Chi Ling Lee*, Wei-I Lee

*此作品的通信作者

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13 引文 斯高帕斯(Scopus)

摘要

Indium tin oxide (ITO), with its transparency and strong adhesion to GaN, has been used as a replacement for NiAu as a contact on p-GaN. However, ITO suffers from high contact resistance on p-GaN. In this work, low contact resistance between ITO and the p-GaN layer was consistently achieved using various strained InGaN layers as the interface layers between ITO and p-GaN layer. The doping of InGaN, whether n type or p type, has a relatively weak effect on the contact resistance as long as the thickness of the InGaN layer is adequately controlled. The secondary-ion-mass spectroscopy depth profile reveals that the n -type InGaN strained contact layer was also heavily doped with Mg. Results of this study demonstrate that the piezoelectric field between InGaN and p-GaN is important in reducing the barrier height of Ohmic contact.

原文English
文章編號181125
期刊Applied Physics Letters
90
發行號18
DOIs
出版狀態Published - 10 5月 2007

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