Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors

D. K. Sengupta*, W. Fang, J. I. Malin, A. P. Curtis, T. Horton, Hao-Chung Kuo, D. Turnbull, Chun-Hsiung Lin, J. Li, K. C. Hsieh, S. L. Chuang, I. Adesida, M. Feng, S. G. Bishop, G. E. Stillman, J. M. Gibson, Haydn Chen, J. Mazumder, H. C. Liu

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

The effect of rapid thermal annealing (RTA) on important detector characteristics such as dark current, absolute response, noise, and detectivity is investigated for quantum-well infrared photodetectors (QWIP) operating in the 8-12 μm wavelength regime. A comprehensive set of experiments is conducted on QWIPs fabricated from both as-grown and annealed multiple-quantum-well structures. RTA is done at an anneal temperature of 850°C for 30 s using an SiO2 encapsulant. In general, a decrease in performance is observed for RTA QWIPs when compared to the as-grown detectors. The peak absolute response of the annealed QWIPs is lower by almost a factor of four, which results in a factor of four decrease in quantum efficiency. In addition, a degraded noise performance results in a detectivity which is five times lower than that of QWIPs using asgrown structures. Theoretical calculations of the absorption coefficient spectrum are in excellent agreement with the experimental data.

原文English
頁(從 - 到)43-51
頁數9
期刊Journal of Electronic Materials
26
發行號1
DOIs
出版狀態Published - 1月 1997

指紋

深入研究「Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors」主題。共同形成了獨特的指紋。

引用此