Effects of Process and Gate Doping Species on Negative-Bias-Temperature Instability of p-Channel MOSFETs

Da Yuan Lee*, Tiao Yuan Huang, Horng-Chih Lin, Wan Ju Chiang, Guo Wei Huang, Ta-Hui Wang

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

The effects of poly-Si gate doping type and species as well as thermal treatments on negative-bias-temperature instability (NBTI) of p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) were investigated. We found that devices with n+-poly-Si gate depict a smaller threshold voltage shift after bias-temperature stressing, compared to their p+-poly-Si-gated counterparts. By carefully controlling the thermal budget to suppress boron penetration, NBTI can be reduced by fluorine incorporation in p+-poly-Si-gated devices. Finally, NBTI is found to be aggravated in devices subjected to H2 postmetalannealing, highlighting the important role of hydrogen bonds.

原文English
頁(從 - 到)G144-G148
期刊Journal of the Electrochemical Society
151
發行號2
DOIs
出版狀態Published - 2004

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