Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology
Po-Tsun Liu*, Chen Shuo Huang, Yi Ling Huang, Jing Ru Lin, Szu Lin Cheng, Yoshio Nishi, S. M. Sze
*此作品的通信作者
研究成果: Article › 同行評審
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斯高帕斯（Scopus）