Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology

Po-Tsun Liu; Chen Shuo Huang; Yi Ling Huang; Jing Ru Lin; Szu Lin Cheng; Yoshio Nishi; S. M. Sze

doi:10.1063/1.3365177

Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology

Po-Tsun Liu^*, Chen Shuo Huang, Yi Ling Huang, Jing Ru Lin, Szu Lin Cheng, Yoshio Nishi, S. M. Sze

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO ₂ /germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO ₂ /Ge interface at 150 °C. A smooth interfacial GeO ₂ layer between gate SiO ₂ and Ge is thereby formed after SCF treatment, and the frequency dispersion of capacitance-voltage characteristics is also effectively alleviated. Furthermore, the electrical degradation of Ge-MOS after a postgate dielectric annealing at 450 °C can be restored to a extent similar to the initial state.

原文	English
文章編號	112902
頁數	3
期刊	Applied Physics Letters
卷	96
發行號	11
DOIs	https://doi.org/10.1063/1.3365177
出版狀態	Published - 26 3月 2010

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title = "Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology",

abstract = " Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO 2 /germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO 2 /Ge interface at 150 °C. A smooth interfacial GeO 2 layer between gate SiO 2 and Ge is thereby formed after SCF treatment, and the frequency dispersion of capacitance-voltage characteristics is also effectively alleviated. Furthermore, the electrical degradation of Ge-MOS after a postgate dielectric annealing at 450 °C can be restored to a extent similar to the initial state.",

author = "Po-Tsun Liu and Huang, {Chen Shuo} and Huang, {Yi Ling} and Lin, {Jing Ru} and Cheng, {Szu Lin} and Yoshio Nishi and Sze, {S. M.}",

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AU - Liu, Po-Tsun

AU - Huang, Chen Shuo

AU - Huang, Yi Ling

AU - Lin, Jing Ru

AU - Cheng, Szu Lin

AU - Nishi, Yoshio

AU - Sze, S. M.

PY - 2010/3/26

Y1 - 2010/3/26

N2 - Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO 2 /germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO 2 /Ge interface at 150 °C. A smooth interfacial GeO 2 layer between gate SiO 2 and Ge is thereby formed after SCF treatment, and the frequency dispersion of capacitance-voltage characteristics is also effectively alleviated. Furthermore, the electrical degradation of Ge-MOS after a postgate dielectric annealing at 450 °C can be restored to a extent similar to the initial state.

AB - Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO 2 /germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO 2 /Ge interface at 150 °C. A smooth interfacial GeO 2 layer between gate SiO 2 and Ge is thereby formed after SCF treatment, and the frequency dispersion of capacitance-voltage characteristics is also effectively alleviated. Furthermore, the electrical degradation of Ge-MOS after a postgate dielectric annealing at 450 °C can be restored to a extent similar to the initial state.

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DO - 10.1063/1.3365177

M3 - Article

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SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

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ER -

Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology

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