Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides

Chi Chun Chen; Horng-Chih Lin; Chun Yen Chang; Tiao Yuan Huang; Chao-Hsin Chien; Mong Song Liang

doi:10.1149/1.1390971

Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides

Chi Chun Chen, Horng-Chih Lin, Chun Yen Chang, Tiao Yuan Huang, Chao-Hsin Chien, Mong Song Liang

電子研究所

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Effects of poly-gate doping concentration on plasma charging damage in ultrathin gate oxides were investigated. While the charge-to-breakdown (Q_bd) value under gate injection stress polarity (-V_g) is independent of the doping concentration, Q_bd under substrate injection stress polarity (+V_g) shows a noticeable improvement with increasing doping concentration. However, our results show that plasma-induced oxide degradation is actually aggravated with increasing poly-gate doping concentration. These seemingly inconsistent observations can be explained by the lowering of plasma charging potential in the case of insufficient poly-gate doping.

原文	English
頁（從 - 到）	103-105
頁數	3
期刊	Electrochemical and Solid-State Letters
卷	3
發行號	2
DOIs	https://doi.org/10.1149/1.1390971
出版狀態	Published - 2月 2000

存取文件

10.1149/1.1390971

其它文件與鏈接

Link to publication in Scopus

引用此

@article{92785f488f1a43438107e9be8b71cb59,

title = "Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides",

abstract = "Effects of poly-gate doping concentration on plasma charging damage in ultrathin gate oxides were investigated. While the charge-to-breakdown (Qbd) value under gate injection stress polarity (-Vg) is independent of the doping concentration, Qbd under substrate injection stress polarity (+Vg) shows a noticeable improvement with increasing doping concentration. However, our results show that plasma-induced oxide degradation is actually aggravated with increasing poly-gate doping concentration. These seemingly inconsistent observations can be explained by the lowering of plasma charging potential in the case of insufficient poly-gate doping.",

author = "Chen, {Chi Chun} and Horng-Chih Lin and Chang, {Chun Yen} and Huang, {Tiao Yuan} and Chao-Hsin Chien and Liang, {Mong Song}",

year = "2000",

month = feb,

doi = "10.1149/1.1390971",

language = "English",

volume = "3",

pages = "103--105",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "2",

}

TY - JOUR

T1 - Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides

AU - Chen, Chi Chun

AU - Lin, Horng-Chih

AU - Chang, Chun Yen

AU - Huang, Tiao Yuan

AU - Chien, Chao-Hsin

AU - Liang, Mong Song

PY - 2000/2

Y1 - 2000/2

N2 - Effects of poly-gate doping concentration on plasma charging damage in ultrathin gate oxides were investigated. While the charge-to-breakdown (Qbd) value under gate injection stress polarity (-Vg) is independent of the doping concentration, Qbd under substrate injection stress polarity (+Vg) shows a noticeable improvement with increasing doping concentration. However, our results show that plasma-induced oxide degradation is actually aggravated with increasing poly-gate doping concentration. These seemingly inconsistent observations can be explained by the lowering of plasma charging potential in the case of insufficient poly-gate doping.

AB - Effects of poly-gate doping concentration on plasma charging damage in ultrathin gate oxides were investigated. While the charge-to-breakdown (Qbd) value under gate injection stress polarity (-Vg) is independent of the doping concentration, Qbd under substrate injection stress polarity (+Vg) shows a noticeable improvement with increasing doping concentration. However, our results show that plasma-induced oxide degradation is actually aggravated with increasing poly-gate doping concentration. These seemingly inconsistent observations can be explained by the lowering of plasma charging potential in the case of insufficient poly-gate doping.

UR - http://www.scopus.com/inward/record.url?scp=0034140309&partnerID=8YFLogxK

U2 - 10.1149/1.1390971

DO - 10.1149/1.1390971

M3 - Article

AN - SCOPUS:0034140309

SN - 1099-0062

VL - 3

SP - 103

EP - 105

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides

摘要

存取文件

其它文件與鏈接

指紋

引用此