摘要
Effects of poly-gate doping concentration on plasma charging damage in ultrathin gate oxides were investigated. While the charge-to-breakdown (Q bd ) value under gate injection stress polarity (-V g ) is independent of the doping concentration, Q bd under substrate injection stress polarity (+V g ) shows a noticeable improvement with increasing doping concentration. However, our results show that plasma-induced oxide degradation is actually aggravated with increasing poly-gate doping concentration. These seemingly inconsistent observations can be explained by the lowering of plasma charging potential in the case of insufficient poly-gate doping.
| 原文 | English |
|---|---|
| 頁（從 - 到） | 103-105 |
| 頁數 | 3 |
| 期刊 | Electrochemical and Solid-State Letters |
| 卷 | 3 |
| 發行號 | 2 |
| DOIs | |
| 出版狀態 | Published - 1 2月 2000 |