Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs

C. W. Lin; M. Z. Yang; C. C. Yeh; L. J. Cheng; T. Y. Huang; Huang-Chung Cheng; Horng-Chih Lin; Tien-Sheng Chao; C. Y. Chang

doi:10.1109/IEDM.1999.824157

Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs

C. W. Lin^*, M. Z. Yang, C. C. Yeh, L. J. Cheng, T. Y. Huang, Huang-Chung Cheng, Horng-Chih Lin, Tien-Sheng Chao, C. Y. Chang

^*此作品的通信作者

研究成果: Conference article › 同行評審

23 引文斯高帕斯（Scopus）

摘要

A complete performance and reliability study on effects of different plasma treatments (NH ₃ and N ₂ O), substrate types (oxidized silicon wafer and quartz), and crystallization methods (excimer laser annealing and solid phase crystallization) of low temperature polysilicon (LTPS, <600°C) TFTs are reported. It is shown that devices made by different fabrication methods exhibit different degradation behaviors under various stressing conditions.

原文	English
頁（從 - 到）	305-308
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1999.824157
出版狀態	Published - 1 12月 1999
事件	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA 持續時間: 5 12月 1999 → 8 12月 1999

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10.1109/IEDM.1999.824157

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Lin, C. W., Yang, M. Z., Yeh, C. C., Cheng, L. J., Huang, T. Y., Cheng, H-C., Lin, H-C., Chao, T-S., & Chang, C. Y. (1999). Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs. Technical Digest - International Electron Devices Meeting, 305-308. https://doi.org/10.1109/IEDM.1999.824157

@article{e7eb05c37f0546c9987d0e81f59c7eba,

title = "Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs",

abstract = " A complete performance and reliability study on effects of different plasma treatments (NH 3 and N 2 O), substrate types (oxidized silicon wafer and quartz), and crystallization methods (excimer laser annealing and solid phase crystallization) of low temperature polysilicon (LTPS, <600°C) TFTs are reported. It is shown that devices made by different fabrication methods exhibit different degradation behaviors under various stressing conditions. ",

author = "Lin, {C. W.} and Yang, {M. Z.} and Yeh, {C. C.} and Cheng, {L. J.} and Huang, {T. Y.} and Huang-Chung Cheng and Horng-Chih Lin and Tien-Sheng Chao and Chang, {C. Y.}",

year = "1999",

month = dec,

day = "1",

doi = "10.1109/IEDM.1999.824157",

language = "English",

pages = "305--308",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 05-12-1999 Through 08-12-1999",

}

TY - JOUR

T1 - Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs

AU - Lin, C. W.

AU - Yang, M. Z.

AU - Yeh, C. C.

AU - Cheng, L. J.

AU - Huang, T. Y.

AU - Cheng, Huang-Chung

AU - Lin, Horng-Chih

AU - Chao, Tien-Sheng

AU - Chang, C. Y.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - A complete performance and reliability study on effects of different plasma treatments (NH 3 and N 2 O), substrate types (oxidized silicon wafer and quartz), and crystallization methods (excimer laser annealing and solid phase crystallization) of low temperature polysilicon (LTPS, <600°C) TFTs are reported. It is shown that devices made by different fabrication methods exhibit different degradation behaviors under various stressing conditions.

AB - A complete performance and reliability study on effects of different plasma treatments (NH 3 and N 2 O), substrate types (oxidized silicon wafer and quartz), and crystallization methods (excimer laser annealing and solid phase crystallization) of low temperature polysilicon (LTPS, <600°C) TFTs are reported. It is shown that devices made by different fabrication methods exhibit different degradation behaviors under various stressing conditions.

UR - http://www.scopus.com/inward/record.url?scp=0033352172&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1999.824157

DO - 10.1109/IEDM.1999.824157

M3 - Conference article

AN - SCOPUS:0033352172

SN - 0163-1918

SP - 305

EP - 308

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

Y2 - 5 December 1999 through 8 December 1999

ER -

Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs

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