Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs

C. W. Lin*, M. Z. Yang, C. C. Yeh, L. J. Cheng, T. Y. Huang, Huang-Chung Cheng, Horng-Chih Lin, Tien-Sheng Chao, C. Y. Chang

*此作品的通信作者

研究成果: Conference article同行評審

23 引文 斯高帕斯(Scopus)

摘要

A complete performance and reliability study on effects of different plasma treatments (NH3 and N2O), substrate types (oxidized silicon wafer and quartz), and crystallization methods (excimer laser annealing and solid phase crystallization) of low temperature polysilicon (LTPS, <600°C) TFTs are reported. It is shown that devices made by different fabrication methods exhibit different degradation behaviors under various stressing conditions.

原文English
頁(從 - 到)305-308
頁數4
期刊Technical Digest - International Electron Devices Meeting
DOIs
出版狀態Published - 1999
事件1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
持續時間: 5 12月 19998 12月 1999

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