摘要
A complete performance and reliability study on effects of different plasma treatments (NH 3 and N 2 O), substrate types (oxidized silicon wafer and quartz), and crystallization methods (excimer laser annealing and solid phase crystallization) of low temperature polysilicon (LTPS, <600°C) TFTs are reported. It is shown that devices made by different fabrication methods exhibit different degradation behaviors under various stressing conditions.
原文 | English |
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頁(從 - 到) | 305-308 |
頁數 | 4 |
期刊 | Technical Digest - International Electron Devices Meeting |
DOIs | |
出版狀態 | Published - 1 12月 1999 |
事件 | 1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA 持續時間: 5 12月 1999 → 8 12月 1999 |