A complete performance and reliability study on effects of different plasma treatments (NH 3 and N 2 O), substrate types (oxidized silicon wafer and quartz), and crystallization methods (excimer laser annealing and solid phase crystallization) of low temperature polysilicon (LTPS, <600°C) TFTs are reported. It is shown that devices made by different fabrication methods exhibit different degradation behaviors under various stressing conditions.
|頁（從 - 到）||305-308|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||Published - 1 12月 1999|
|事件||1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA|
持續時間: 5 12月 1999 → 8 12月 1999