摘要
A complete performance and reliability study on effects of different plasma treatments (NH3 and N2O), substrate types (oxidized silicon wafer and quartz), and crystallization methods (excimer laser annealing and solid phase crystallization) of low temperature polysilicon (LTPS, <600°C) TFTs are reported. It is shown that devices made by different fabrication methods exhibit different degradation behaviors under various stressing conditions.
原文 | English |
---|---|
頁(從 - 到) | 305-308 |
頁數 | 4 |
期刊 | Technical Digest - International Electron Devices Meeting |
DOIs | |
出版狀態 | Published - 1999 |
事件 | 1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA 持續時間: 5 12月 1999 → 8 12月 1999 |