Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs

C. W. Lin; M. Z. Yang; C. C. Yeh; L. J. Cheng; T. Y. Huang; Huang-Chung Cheng; Horng-Chih Lin; Tien-Sheng Chao; C. Y. Chang

doi:10.1109/IEDM.1999.824157

Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs

C. W. Lin^*, M. Z. Yang, C. C. Yeh, L. J. Cheng, T. Y. Huang, Huang-Chung Cheng, Horng-Chih Lin, Tien-Sheng Chao, C. Y. Chang

^*此作品的通信作者

研究成果: Conference article › 同行評審

23 引文斯高帕斯（Scopus）

摘要

A complete performance and reliability study on effects of different plasma treatments (NH₃ and N₂O), substrate types (oxidized silicon wafer and quartz), and crystallization methods (excimer laser annealing and solid phase crystallization) of low temperature polysilicon (LTPS, <600°C) TFTs are reported. It is shown that devices made by different fabrication methods exhibit different degradation behaviors under various stressing conditions.

原文	English
頁（從 - 到）	305-308
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1999.824157
出版狀態	Published - 1999
事件	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA 持續時間: 5 12月 1999 → 8 12月 1999

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10.1109/IEDM.1999.824157

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Lin, C. W., Yang, M. Z., Yeh, C. C., Cheng, L. J., Huang, T. Y., Cheng, H.-C., Lin, H.-C., Chao, T.-S., & Chang, C. Y. (1999). Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs. Technical Digest - International Electron Devices Meeting, 305-308. https://doi.org/10.1109/IEDM.1999.824157

@article{e7eb05c37f0546c9987d0e81f59c7eba,

title = "Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs",

abstract = "A complete performance and reliability study on effects of different plasma treatments (NH3 and N2O), substrate types (oxidized silicon wafer and quartz), and crystallization methods (excimer laser annealing and solid phase crystallization) of low temperature polysilicon (LTPS, <600°C) TFTs are reported. It is shown that devices made by different fabrication methods exhibit different degradation behaviors under various stressing conditions.",

author = "Lin, {C. W.} and Yang, {M. Z.} and Yeh, {C. C.} and Cheng, {L. J.} and Huang, {T. Y.} and Huang-Chung Cheng and Horng-Chih Lin and Tien-Sheng Chao and Chang, {C. Y.}",

year = "1999",

doi = "10.1109/IEDM.1999.824157",

language = "English",

pages = "305--308",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1999 IEEE International Devices Meeting (IEDM) ; Conference date: 05-12-1999 Through 08-12-1999",

}

TY - JOUR

T1 - Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs

AU - Lin, C. W.

AU - Yang, M. Z.

AU - Yeh, C. C.

AU - Cheng, L. J.

AU - Huang, T. Y.

AU - Cheng, Huang-Chung

AU - Lin, Horng-Chih

AU - Chao, Tien-Sheng

AU - Chang, C. Y.

PY - 1999

Y1 - 1999

N2 - A complete performance and reliability study on effects of different plasma treatments (NH3 and N2O), substrate types (oxidized silicon wafer and quartz), and crystallization methods (excimer laser annealing and solid phase crystallization) of low temperature polysilicon (LTPS, <600°C) TFTs are reported. It is shown that devices made by different fabrication methods exhibit different degradation behaviors under various stressing conditions.

AB - A complete performance and reliability study on effects of different plasma treatments (NH3 and N2O), substrate types (oxidized silicon wafer and quartz), and crystallization methods (excimer laser annealing and solid phase crystallization) of low temperature polysilicon (LTPS, <600°C) TFTs are reported. It is shown that devices made by different fabrication methods exhibit different degradation behaviors under various stressing conditions.

UR - http://www.scopus.com/inward/record.url?scp=0033352172&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1999.824157

DO - 10.1109/IEDM.1999.824157

M3 - Conference article

AN - SCOPUS:0033352172

SN - 0163-1918

SP - 305

EP - 308

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs

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