Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs

C. W. Lin*, M. Z. Yang, C. C. Yeh, L. J. Cheng, T. Y. Huang, Huang-Chung Cheng, Horng-Chih Lin, Tien-Sheng Chao, C. Y. Chang

*此作品的通信作者

研究成果: Conference article同行評審

23 引文 斯高帕斯(Scopus)

摘要

A complete performance and reliability study on effects of different plasma treatments (NH 3 and N 2 O), substrate types (oxidized silicon wafer and quartz), and crystallization methods (excimer laser annealing and solid phase crystallization) of low temperature polysilicon (LTPS, <600°C) TFTs are reported. It is shown that devices made by different fabrication methods exhibit different degradation behaviors under various stressing conditions.

原文English
頁(從 - 到)305-308
頁數4
期刊Technical Digest - International Electron Devices Meeting
DOIs
出版狀態Published - 1 12月 1999
事件1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
持續時間: 5 12月 19998 12月 1999

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