Effects of oxygen on the growth of Ni induced lateral crystallization of amorphous silicon films

You Da Lin, Yew-Chuhg Wu*, Chi Wei Chao, Guo Ren Hu

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Effects of oxygen on the growth of metal (Ni) induced lateral crystallization (MILC) of amorphous silicon have been investigated. It is found that the oxygen in the annealing ambient did not degrade the MILC length or growth rate. The oxygen existence in Ni film does not degrade the MILC growth rate either. However, it retards the nucleation of poly-Si for about 4h. This is because that NiO needed an incubation period to be reduced to nickel metal for the subsequent mediated crystallization of a-Si process.

原文English
頁(從 - 到)577-580
頁數4
期刊Materials Chemistry and Physics
80
發行號3
DOIs
出版狀態Published - 26 6月 2003

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