Effects of oxygen in Ni films on Ni-induced lateral crystallization of amorphous silicon films at various temperatures

You Da Lin*, Yew-Chuhg Wu

*此作品的通信作者

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2 引文 斯高帕斯(Scopus)

摘要

Effects of oxygen in Ni films on the Ni-induced lateral crystallization (NILC) of amorphous silicon (a-Si) films at various temperatures have been investigated. It was found that oxygen in Ni films retarded the nucleation of polycrystalline silicon (poly-Si) from a-Si, but had little effect on the growth rate of poly-Si. This is because that needed an incubation period to be reduced to Ni metal for the subsequent mediated crystallization of a-Si.

原文English
頁(從 - 到)1708-1711
頁數4
期刊Journal of Electronic Materials
35
發行號9
DOIs
出版狀態Published - 1 1月 2006

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