Effects of N2 Pretreatment on Performance and Stabilities of Power p-GaN HEMTs

Zhen Hong Huang, Chia Hao Chang, Wei Syuan Lin, Ting Chun Lo, Ying Chi Ching, Yu Jen Huang, Robin Christine Hwang, Chin Wen Chou, Tian Li Wu*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In this work, we study the effect of N2 surface treatment on the performance and reliability of p-GaN gate high-electron-mobility-transistor (HEMT). The results indicate that N2 plasma pretreatment is effective in achieving stable threshold voltage, reducing the off-state leakage current and improving the HTRB stability in power p-GaN HEMTs.

原文English
主出版物標題2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350301649
DOIs
出版狀態Published - 2023
事件2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023 - Pulau Pinang, Malaysia
持續時間: 24 7月 202327 7月 2023

出版系列

名字Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
2023-July

Conference

Conference2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023
國家/地區Malaysia
城市Pulau Pinang
期間24/07/2327/07/23

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