Effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions

L. W. Cheng*, S. L. Cheng, J. Y. Chen, L. J. Chen, Bing-Yue Tsui

*此作品的通信作者

研究成果: Conference article同行評審

36 引文 斯高帕斯(Scopus)

摘要

The effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions have been investigated. The phase formation of nickel silicides on nitrogen implanted (001)Si was suppressed and shifted to a higher temperature compared to samples not implanted with nitrogen. The sheet resistance was found to be nearly constant in a wide range of temperature in nitrogen ion implanted samples. It indicates that low-resistivity NiSi is the dominant phase for the 1×1015 N+/cm2 implanted samples annealed at 400-750 °C and for the 2×1015 N2+/cm2 implanted samples annealed at 400-800 °C. The diffusion of nickel atoms is thought to be retarded by the presence of nitrogen atoms. The presence of nitrogen ion can also improve the thermal stability of nickel disilicide. The effects of nitrogen on nickel silicide formation become more pronounced with an increase in the nitrogen dose up to a certain value.

原文English
頁(從 - 到)412-416
頁數5
期刊Thin Solid Films
355
DOIs
出版狀態Published - 1 十一月 1999
事件Proceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films - San Diego, CA, USA
持續時間: 12 四月 199915 四月 1999

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