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Effects of nanoscale V-shaped pits on GaN-based light emitting diodes
Shuo Wei Chen, Heng Li, Chia Jui Chang,
Tien-Chang Lu
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*
此作品的通信作者
光電工程學系
研究成果
:
Review article
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同行評審
16
引文 斯高帕斯(Scopus)
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深入研究「Effects of nanoscale V-shaped pits on GaN-based light emitting diodes」主題。共同形成了獨特的指紋。
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Keyphrases
V-pits
100%
GaN-based Light-emitting Diodes
100%
V-shaped pits
100%
Multiple Quantum Wells
66%
Emission Spectrum
50%
Internal Quantum Efficiency
50%
Pit Area
33%
Depositional System
16%
Metal-organic Chemical Vapor Deposition (MOCVD)
16%
High Performance
16%
Indium Gallium Nitride (InGaN)
16%
Photoluminescence
16%
InGaN Quantum Wells
16%
Pit Size
16%
Quantum Efficiency
16%
Raman Shift
16%
High Quantum Efficiency
16%
Threading Dislocation
16%
Potential Barrier
16%
Nonradiative Recombination
16%
Performance Efficiency
16%
Quantum-confined Stark Effect
16%
Peak Shift
16%
Optimum Diameter
16%
Phenomenological Study
16%
Deposition Study
16%
Engineering
Quantum Well
100%
Light-Emitting Diode
100%
Nanoscale
100%
Internal Quantum Efficiency
60%
Emission Wavelength
40%
Quantum Efficiency
40%
Deposition System
20%
Metal Organic Chemical Vapor Deposition
20%
Review Paper
20%
Radiative Recombination
20%
Threading Dislocation
20%
Peak Shift
20%
Emission Spectra
20%
Optimum Diameter
20%
Material Science
Light-Emitting Diode
100%
Quantum Well
100%
Density
20%
Photoluminescence
20%
Metal-Organic Chemical Vapor Deposition
20%
Chemical Engineering
Vapor Deposition
100%
Chemical Vapor Deposition
100%