@article{80135514e4b0484c8b4ee6cd7f0c0c0c,
title = "Effects of N 2 O-annealed sacrificial oxide on the short-channel effects of nMOSFETs",
abstract = "The authors report the effects of N2O-annealed sacrificial oxide on nMOSFETs. It is demonstrated that by adding an N20-annealing step to the sacrificial oxide which was stripped off before growing the final gate oxide, the reverse short-channel effects (RSCE) can still be effectively suppressed.",
author = "Jong, {F. C.} and Huang, {T. Y.} and Tien-Sheng Chao and Horng-Chih Lin and Wang, {M. F.} and Chang, {C. Y.}",
year = "1998",
month = feb,
day = "19",
doi = "10.1049/el:19980207",
language = "English",
volume = "34",
pages = "404--406",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "John Wiley & Sons Inc.",
number = "4",
}