Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor

Li Feng Teng; Po-Tsun Liu; Yuan Jou Lo; Yao Jen Lee

doi:10.1063/1.4754627

Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor

Li Feng Teng, Po-Tsun Liu, Yuan Jou Lo, Yao Jen Lee

光電工程學系

研究成果: Article › 同行評審

86 引文斯高帕斯（Scopus）

摘要

By using microwave annealing technology instead of thermal furnace annealing, this work elucidates the electrical characteristics of amorphous InGaZnO thin film transistor (a-IGZO TFT) with a carrier mobility of 13.5cm ²/Vs, threshold voltage of 3.28V, and subthreshold swing of 0.43V/decade. This TFT performance with microwave annealing of 100s is well competitive with its counterpart with furnace annealing at 450°C for 1h. A physical mechanism for the electrical improvement is also deduced. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for amorphous oxide in semiconductor TFT manufacturing.

原文	English
文章編號	132901
頁（從 - 到）	1-4
頁數	4
期刊	Applied Physics Letters
卷	101
發行號	13
DOIs	https://doi.org/10.1063/1.4754627
出版狀態	Published - 24 9月 2012

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abstract = "By using microwave annealing technology instead of thermal furnace annealing, this work elucidates the electrical characteristics of amorphous InGaZnO thin film transistor (a-IGZO TFT) with a carrier mobility of 13.5cm 2/Vs, threshold voltage of 3.28V, and subthreshold swing of 0.43V/decade. This TFT performance with microwave annealing of 100s is well competitive with its counterpart with furnace annealing at 450°C for 1h. A physical mechanism for the electrical improvement is also deduced. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for amorphous oxide in semiconductor TFT manufacturing.",

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N2 - By using microwave annealing technology instead of thermal furnace annealing, this work elucidates the electrical characteristics of amorphous InGaZnO thin film transistor (a-IGZO TFT) with a carrier mobility of 13.5cm 2/Vs, threshold voltage of 3.28V, and subthreshold swing of 0.43V/decade. This TFT performance with microwave annealing of 100s is well competitive with its counterpart with furnace annealing at 450°C for 1h. A physical mechanism for the electrical improvement is also deduced. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for amorphous oxide in semiconductor TFT manufacturing.

AB - By using microwave annealing technology instead of thermal furnace annealing, this work elucidates the electrical characteristics of amorphous InGaZnO thin film transistor (a-IGZO TFT) with a carrier mobility of 13.5cm 2/Vs, threshold voltage of 3.28V, and subthreshold swing of 0.43V/decade. This TFT performance with microwave annealing of 100s is well competitive with its counterpart with furnace annealing at 450°C for 1h. A physical mechanism for the electrical improvement is also deduced. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for amorphous oxide in semiconductor TFT manufacturing.

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Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor

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