Effects of metallic contaminants on the electrical characteristics of ultrathin gate oxides

Tung Ming Pan*, Fu-Hsiang Ko, Tien-Sheng Chao, Chieh Chuang Chen, Kuei Shu Chang-Liao

*此作品的通信作者

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

In this paper, we describe the effects that five metallic contaminants have on the electrical property of an ultrathin gate oxide. We found that, among five metallic contaminants, Fe and Ni resulted in the lowest electric breakdown fields (Ebd) and charge-to-breakdown ratios (Qbd) and the highest leakage currents and interface state densities (Dit). On the other hand, Ca-contaminated devices exhibit a lower leakage current and D it and a higher Qbd than did the other metals.

原文English
頁(從 - 到)G201-G203
頁數3
期刊Electrochemical and Solid-State Letters
8
發行號8
DOIs
出版狀態Published - 14 九月 2005

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