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Effects of metal nanocrystals and traps in tunneling rate measurements in metal nanocrystal based carbon nanotube memory
Udayan Ganguly
*
,
Tuo-Hung Hou
, Edwin Kan
*
此作品的通信作者
電子研究所
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Conference contribution
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Engineering & Materials Science
Aluminum oxide
9%
Calibration
7%
Carbon nanotubes
50%
Data storage equipment
28%
Electric fields
34%
Electric potential
4%
Metals
30%
Nanocrystals
70%
Physics
8%
Temperature
3%
Temperature measurement
10%
Threshold voltage
10%
Tunnels
31%
Physics & Astronomy
approximation
1%
carbon nanotube based memory
100%
carbon nanotubes
5%
cells
1%
charging
2%
cross sections
1%
electric fields
6%
low voltage
2%
metals
24%
nanocrystals
42%
performance
2%
physics
1%
proximity
2%
pulse charging
5%
shift
1%
temperature
0%
temperature measurement
2%
threshold voltage
2%
traps
35%
tunnels
11%
Chemical Compounds
Carbon Nanotube
34%
Dielectric Material
10%
Electric Field
10%
Metal
21%
Nanocrystal
38%
Nanotube
4%
Quantum Transport
4%
Resistance
1%
Tunneling
48%
Voltage
4%