Effects of low tempersture NH3 treatment on HfO2/SiO2 stack gate dielectrics fabricated by MOCVD system

Keyphrases

• Metal-organic Chemical Vapor Deposition (MOCVD) 100%
• Low Temperature 100%
• Silica 100%
• HfO2 100%
• NH3 Treatment 100%
• Stacked Gate Dielectric 100%
• NH 3 75%
• Post-deposition Annealing 50%
• Oxide Thickness 50%
• Annealing 25%
• Annealing Temperature 25%
• HfO2 Films 25%
• Interfacial Layer 25%
• Frequency Dispersion 25%
• Trap Generation 25%
• Gate Stack 25%
• Gate Electrode 25%
• Generation Rate 25%
• TiN Gate 25%
• Quantum Effects 25%
• C-V Characteristics 25%
• Post Deposition 25%
• Characteristic Frequency 25%
• High-temperature Nitridation 25%
• Dielectric Breakdown Voltage 25%

Engineering

• Low-Temperature 100%
• Gate Dielectric 100%
• Silicon Dioxide 100%
• Oxide Thickness 50%
• Dielectrics 25%
• Annealing Temperature 25%
• Breakdown Voltage 25%
• Interfacial Layer 25%
• Frequency Dispersion 25%
• Gate Stack 25%
• Gate Electrode 25%
• Quantum Effect 25%
• Characteristic Frequency 25%

Material Science

• Oxide Compound 100%
• Annealing 100%
• Dielectric Material 100%
• Film 50%
• Nitriding 50%
• Electrical Breakdown 50%