@inproceedings{5ff6505617b84125aa3daf9049774315,
title = "Effects of laser sources on the structural damage mechanisms and reverse-bias leakages of laser lift-off GaN-based LEDs",
abstract = "The frequency-tripled Nd YAG laser (355nm) and the KrF pulsed excimer laser (248 nm) were used to separate GaN from sapphire substrates. The laser damage mechanism of these two laser sources and effects on the reverse-bias leakages of GaN-based light-emitting diodes (LEDs) were studied.",
author = "Cheng, {Ji Hao} and Cheng Liao and Huang, {Ping Wei} and Yew-Chuhg Wu",
year = "2008",
month = dec,
day = "1",
doi = "10.1149/1.2983167",
language = "English",
isbn = "9781566776530",
series = "ECS Transactions",
number = "7",
pages = "123--125",
booktitle = "ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9",
edition = "7",
note = "State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting ; Conference date: 12-10-2008 Through 17-10-2008",
}