@inproceedings{a3d8e87a600f42cd9840195ad434c88f,
title = "Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based leds",
abstract = "The KrF pulsed excimer laser (248 nm) and the frequency-tripled Nd YAG laser (355nm) were used to separate GaN thin films from sapphire substrates. The effect of these two laser sources on the reverse-bias leakages of InGaN-GaN light-emitting diodes (LEDs) were studied.",
author = "Cheng, {Ji Hao} and Peng, {Wei Chih} and Yew-Chuhg Wu and Hao Ouyang",
year = "2007",
month = dec,
day = "1",
doi = "10.1149/1.2731196",
language = "English",
isbn = "9781566775519",
series = "ECS Transactions",
number = "2",
pages = "285--287",
booktitle = "ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface",
edition = "2",
note = "46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",
}