Effects of keV electron irradiation on the avalanche-electron generation rates of three donors on oxidized silicon

Chih Tang Sah*, Jack Yuan Chen Sun, Joseph Jeng Tao Tzou

*此作品的通信作者

研究成果: Article同行評審

23 引文 斯高帕斯(Scopus)

摘要

After keV electron beam irradiation of oxidized silicon, the avalanche-electron-injection generation rates and densities of the bulk compensating donor, the interface states, and the turnaround trap all increase. Heating at 200°C can anneal out these three donor-like traps, however, it cannot restore the generation rates back to their original and lower pre-keV electron irradiation values. The experimental results also indicate that all three traps may be related to the same mobile impurity species whose bonds are loosened by the keV electrons and then broken or released by the avalanche injected electrons.

原文English
頁(從 - 到)4378-4381
頁數4
期刊Journal of Applied Physics
54
發行號8
DOIs
出版狀態Published - 1983

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