@inproceedings{cdaf8865839c4f23ba46b75e7ed1ab47,
title = "Effects of In/Zn composition on the Performance of Ultra-thin Atomic Layer Deposited InxZnl-xO Channel Thin-Film Transistors",
abstract = "This study focuses on the fabrication of high-performance thin-film transistors (TFTs) using an atomic layer deposited (ALD) ultra-thin (4 nm) amorphous InX Zn1-XO (IZO) channel. We investigated the impact of composition and annealing on the performance of TFTs with InxZn1-xO channel layers (x=0.3,0.5,0.8, and 1). Among the various compositions, the TFT with In0.5 Zn0.5O channel demonstrated optimal electrical characteristics for normally-off operation and integration with complementary metal-oxide-semiconductor (CMOS) technology. These characteristics include a high mobility of 52 cm2/V · s, a positive threshold voltage of 0.1 V, a low subthreshold gate swing of 83 mV/decade, and an ION/IOFF current ratio over 109.",
keywords = "ALD and BEOL, InZnO TFT",
author = "Liang, \{Yan Kui\} and Zheng, \{June Yang\} and Lin, \{Jing Wei\} and Hua, \{Yi Miao\} and Chou, \{Tsung Te\} and Lu, \{Chun Chieh\} and Huang, \{Huai Ying\} and Lin, \{Yu Ming\} and Kei, \{Chi Chung\} and Chang, \{Edward Yi\} and Lin, \{Chun Hsiung\}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 ; Conference date: 07-03-2023 Through 10-03-2023",
year = "2023",
doi = "10.1109/EDTM55494.2023.10103052",
language = "English",
series = "7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "7th IEEE Electron Devices Technology and Manufacturing Conference",
address = "美國",
}