Effects of In/Zn composition on the Performance of Ultra-thin Atomic Layer Deposited InxZnl-xO Channel Thin-Film Transistors

Yan Kui Liang, June Yang Zheng, Jing Wei Lin, Yi Miao Hua, Tsung Te Chou, Chun Chieh Lu, Huai Ying Huang, Yu Ming Lin, Chi Chung Kei, Edward Yi Chang, Chun Hsiung Lin

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

This study focuses on the fabrication of high-performance thin-film transistors (TFTs) using an atomic layer deposited (ALD) ultra-thin (4 nm) amorphous InX Zn1-XO (IZO) channel. We investigated the impact of composition and annealing on the performance of TFTs with InxZn1-xO channel layers (x=0.3,0.5,0.8, and 1). Among the various compositions, the TFT with In0.5 Zn0.5O channel demonstrated optimal electrical characteristics for normally-off operation and integration with complementary metal-oxide-semiconductor (CMOS) technology. These characteristics include a high mobility of 52 cm2/V · s, a positive threshold voltage of 0.1 V, a low subthreshold gate swing of 83 mV/decade, and an ION/IOFF current ratio over 109.

原文English
主出版物標題7th IEEE Electron Devices Technology and Manufacturing Conference
主出版物子標題Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350332520
DOIs
出版狀態Published - 2023
事件7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of
持續時間: 7 3月 202310 3月 2023

出版系列

名字7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
國家/地區Korea, Republic of
城市Seoul
期間7/03/2310/03/23

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