Effects of In/Zn composition on the Performance of Ultra-thin Atomic Layer Deposited InxZnl-xO Channel Thin-Film Transistors

Yan Kui Liang; June Yang Zheng; Jing Wei Lin; Yi Miao Hua; Tsung Te Chou; Chun Chieh Lu; Huai Ying Huang; Yu Ming Lin; Chi Chung Kei; Edward Yi Chang; Chun Hsiung Lin

doi:10.1109/EDTM55494.2023.10103052

Effects of In/Zn composition on the Performance of Ultra-thin Atomic Layer Deposited InxZn_l-xO Channel Thin-Film Transistors

Yan Kui Liang, June Yang Zheng, Jing Wei Lin, Yi Miao Hua, Tsung Te Chou, Chun Chieh Lu, Huai Ying Huang, Yu Ming Lin, Chi Chung Kei, Edward Yi Chang, Chun Hsiung Lin

研究成果: Conference contribution › 同行評審

3 引文斯高帕斯（Scopus）

摘要

This study focuses on the fabrication of high-performance thin-film transistors (TFTs) using an atomic layer deposited (ALD) ultra-thin (4 nm) amorphous InX Zn1-XO (IZO) channel. We investigated the impact of composition and annealing on the performance of TFTs with InxZn1-xO channel layers (x=0.3,0.5,0.8, and 1). Among the various compositions, the TFT with In0.5 Zn0.5O channel demonstrated optimal electrical characteristics for normally-off operation and integration with complementary metal-oxide-semiconductor (CMOS) technology. These characteristics include a high mobility of 52 cm2/V · s, a positive threshold voltage of 0.1 V, a low subthreshold gate swing of 83 mV/decade, and an ION/IOFF current ratio over 109.

原文	English
主出版物標題	7th IEEE Electron Devices Technology and Manufacturing Conference
主出版物子標題	Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9798350332520
DOIs	https://doi.org/10.1109/EDTM55494.2023.10103052
出版狀態	Published - 2023
事件	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, 韓國持續時間: 7 3月 2023 → 10 3月 2023

出版系列

名字	7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
國家/地區	韓國
城市	Seoul
期間	7/03/23 → 10/03/23

存取文件

10.1109/EDTM55494.2023.10103052

其它文件與鏈接

Link to publication in Scopus

引用此

Liang, Y. K., Zheng, J. Y., Lin, J. W., Hua, Y. M., Chou, T. T., Lu, C. C., Huang, H. Y., Lin, Y. M., Kei, C. C., Chang, E. Y., & Lin, C. H. (2023). Effects of In/Zn composition on the Performance of Ultra-thin Atomic Layer Deposited InxZn_l-xO Channel Thin-Film Transistors. 於 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM55494.2023.10103052

Liang, Yan Kui ; Zheng, June Yang ; Lin, Jing Wei 等. / Effects of In/Zn composition on the Performance of Ultra-thin Atomic Layer Deposited InxZn_l-xO Channel Thin-Film Transistors. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

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title = "Effects of In/Zn composition on the Performance of Ultra-thin Atomic Layer Deposited InxZnl-xO Channel Thin-Film Transistors",

abstract = "This study focuses on the fabrication of high-performance thin-film transistors (TFTs) using an atomic layer deposited (ALD) ultra-thin (4 nm) amorphous InX Zn1-XO (IZO) channel. We investigated the impact of composition and annealing on the performance of TFTs with InxZn1-xO channel layers (x=0.3,0.5,0.8, and 1). Among the various compositions, the TFT with In0.5 Zn0.5O channel demonstrated optimal electrical characteristics for normally-off operation and integration with complementary metal-oxide-semiconductor (CMOS) technology. These characteristics include a high mobility of 52 cm2/V · s, a positive threshold voltage of 0.1 V, a low subthreshold gate swing of 83 mV/decade, and an ION/IOFF current ratio over 109.",

keywords = "ALD and BEOL, InZnO TFT",

author = "Liang, {Yan Kui} and Zheng, {June Yang} and Lin, {Jing Wei} and Hua, {Yi Miao} and Chou, {Tsung Te} and Lu, {Chun Chieh} and Huang, {Huai Ying} and Lin, {Yu Ming} and Kei, {Chi Chung} and Chang, {Edward Yi} and Lin, {Chun Hsiung}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 ; Conference date: 07-03-2023 Through 10-03-2023",

year = "2023",

doi = "10.1109/EDTM55494.2023.10103052",

language = "English",

series = "7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "7th IEEE Electron Devices Technology and Manufacturing Conference",

address = "美國",

}

Liang, YK, Zheng, JY, Lin, JW, Hua, YM, Chou, TT, Lu, CC, Huang, HY, Lin, YM, Kei, CC, Chang, EY & Lin, CH 2023, Effects of In/Zn composition on the Performance of Ultra-thin Atomic Layer Deposited InxZn_l-xO Channel Thin-Film Transistors. 於 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023, Institute of Electrical and Electronics Engineers Inc., 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023, Seoul, 韓國, 7/03/23. https://doi.org/10.1109/EDTM55494.2023.10103052

Effects of In/Zn composition on the Performance of Ultra-thin Atomic Layer Deposited InxZn_l-xO Channel Thin-Film Transistors. / Liang, Yan Kui; Zheng, June Yang; Lin, Jing Wei 等.
7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Effects of In/Zn composition on the Performance of Ultra-thin Atomic Layer Deposited InxZnl-xO Channel Thin-Film Transistors

AU - Liang, Yan Kui

AU - Zheng, June Yang

AU - Lin, Jing Wei

AU - Hua, Yi Miao

AU - Chou, Tsung Te

AU - Lu, Chun Chieh

AU - Huang, Huai Ying

AU - Lin, Yu Ming

AU - Kei, Chi Chung

AU - Chang, Edward Yi

AU - Lin, Chun Hsiung

PY - 2023

Y1 - 2023

N2 - This study focuses on the fabrication of high-performance thin-film transistors (TFTs) using an atomic layer deposited (ALD) ultra-thin (4 nm) amorphous InX Zn1-XO (IZO) channel. We investigated the impact of composition and annealing on the performance of TFTs with InxZn1-xO channel layers (x=0.3,0.5,0.8, and 1). Among the various compositions, the TFT with In0.5 Zn0.5O channel demonstrated optimal electrical characteristics for normally-off operation and integration with complementary metal-oxide-semiconductor (CMOS) technology. These characteristics include a high mobility of 52 cm2/V · s, a positive threshold voltage of 0.1 V, a low subthreshold gate swing of 83 mV/decade, and an ION/IOFF current ratio over 109.

AB - This study focuses on the fabrication of high-performance thin-film transistors (TFTs) using an atomic layer deposited (ALD) ultra-thin (4 nm) amorphous InX Zn1-XO (IZO) channel. We investigated the impact of composition and annealing on the performance of TFTs with InxZn1-xO channel layers (x=0.3,0.5,0.8, and 1). Among the various compositions, the TFT with In0.5 Zn0.5O channel demonstrated optimal electrical characteristics for normally-off operation and integration with complementary metal-oxide-semiconductor (CMOS) technology. These characteristics include a high mobility of 52 cm2/V · s, a positive threshold voltage of 0.1 V, a low subthreshold gate swing of 83 mV/decade, and an ION/IOFF current ratio over 109.

KW - ALD and BEOL

KW - InZnO TFT

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U2 - 10.1109/EDTM55494.2023.10103052

DO - 10.1109/EDTM55494.2023.10103052

M3 - Conference contribution

AN - SCOPUS:85158144017

T3 - 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

BT - 7th IEEE Electron Devices Technology and Manufacturing Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023

Y2 - 7 March 2023 through 10 March 2023

ER -

Liang YK, Zheng JY, Lin JW, Hua YM, Chou TT, Lu CC 等. Effects of In/Zn composition on the Performance of Ultra-thin Atomic Layer Deposited InxZn_l-xO Channel Thin-Film Transistors. 於 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). doi: 10.1109/EDTM55494.2023.10103052