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Effects of hydrogenation on electrical properties of InP grown on GaAs by the photochemical vapor deposition system
T. Y. Lin
*
, Y. F. Chen
,
Wei-Kuo Chen
, Y. S. Lue
*
此作品的通信作者
電子物理學系
國立陽明交通大學
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引文 斯高帕斯（Scopus）
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深入研究「Effects of hydrogenation on electrical properties of InP grown on GaAs by the photochemical vapor deposition system」主題。共同形成了獨特的指紋。
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Keyphrases
Auxiliary Method
33%
Capacitance-voltage Measurements
33%
Current-voltage
33%
Deep Level Transient Spectroscopy
33%
Deep Traps
33%
Depositional System
100%
Device Application
33%
Electrical Properties
100%
Epilayer
33%
GaAs Substrate
33%
Gallium Arsenide
100%
Hydrogen Plasma
33%
Hydrogenation
100%
Passivated
33%
Plasma Exposure
33%
Reverse Breakdown Voltage
33%
Room Temperature
33%
Schottky Barrier Height
33%
Spectroscopic Techniques
33%
Vapor Deposition
100%
Engineering
Barrier Height
33%
Breakdown Voltage
33%
Deep Level
100%
Deposition System
100%
Electrical Measurement
33%
Gaas Substrate
33%
Gallium Arsenide
100%
Hydrogenation
100%
Room Temperature
33%
Schottky Barrier
33%
Transients
33%
Vapor Deposition
100%
Chemistry
Ambient Reaction Temperature
33%
Breakdown Voltage
33%
Deep Level Transient Spectroscopy
33%
Electrical Property
100%
Hydrogen
33%
Hydrogenation
100%
Schottky Contact
33%
Spectroscopy Technique
33%
Material Science
Capacitance
33%
Deep-Level Transient Spectroscopy
33%
Epilayers
33%
Gallium Arsenide
100%
Hydrogenation
100%
Schottky Barrier
33%
Spectroscopy Technique
33%
Chemical Engineering
Auxiliaries
33%
Hydrogenation
100%
Vapor Deposition
100%
Voltage Measurement
33%