Effects of hydrogen on electrical and chemical properties of low-k hydrogen silsesquioxane as an intermetal dielectric for nonetchback processes

T. C. Chang*, Po-Tsun Liu, F. Y. Shih, S. M. Sze

*此作品的通信作者

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

The hydrogen plasma and hydrogen ion implantation post-treatments are applied for the first time to low-k hydrogen silsesquioxane (HSQ). These two post-treatments can efficiently abate the poisoned via problem of HSQ as an intermetal dielectric for nonetchback process. Both via resistance and dielectric constant are reduced using the hydrogen post-treatments. We propose that the role of hydrogen is to passivate the dangling bonds in the porous HSQ film and to prevent HSQ from moisture uptake and O2 plasma attack during the nonetchback integrated process.

原文English
頁(從 - 到)390-392
頁數3
期刊Electrochemical and Solid-State Letters
2
發行號8
DOIs
出版狀態Published - 1 8月 1999

指紋

深入研究「Effects of hydrogen on electrical and chemical properties of low-k hydrogen silsesquioxane as an intermetal dielectric for nonetchback processes」主題。共同形成了獨特的指紋。

引用此