Effects of H₂ and Ar flow rates on the deposition of hydrogenated silicon thin films by an inductive coupled plasma-chemical vapor deposition system

Engineering & Materials Science

• Amorphous films 29%
• Amorphous silicon 25%
• Antennas 11%
• Argon 20%
• Chemical vapor deposition 85%
• Deposition rates 47%
• Diffraction patterns 26%
• Flow rate 55%
• Hydrogen 29%
• Inductance 17%
• Langmuir probes 66%
• Microcrystalline silicon 34%
• Microstructure 12%
• Monitoring 10%
• Plasma deposition 30%
• Plasmas 67%
• Quartz 40%
• Raman spectroscopy 24%
• Silicon 57%
• Spectrometers 65%
• Substrates 26%
• Thin films 69%
• X ray diffraction 36%

Physics & Astronomy

• amorphous silicon 16%
• antennas 16%
• argon 14%
• diffraction 9%
• diffraction patterns 15%
• electrostatic probes 41%
• flow velocity 58%
• hydrogen 22%
• inductance 19%
• light emission 34%
• microstructure 10%
• quartz 32%
• Raman spectroscopy 15%
• silicon 39%
• silicon films 19%
• spectrometers 41%
• thin films 37%
• vapor deposition 56%
• x rays 16%

Chemical Compounds

• Amorphous Film 24%
• Amorphous Material 12%
• Electric Field 16%
• Flow 11%
• Flow Kinetics 56%
• Hydrogen 18%
• Inductance 29%
• Liquid Film 35%
• Microcrystallinity 19%
• Microstructure 12%
• Plasma 11%
• Plasma Chemical Vapour Deposition 100%
• Probe 22%
• Purity 9%
• Quartz 32%
• Raman Spectroscopy 13%
• X-Ray Diffraction 18%