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Effects of high-resistivity, low-temperature layer in transient capacitance measurements of GaAs n-i-p structures
Jenn-Fang Chen
*
, Pai Yong Wang, Nie Chuan Chen
*
此作品的通信作者
電子物理學系
研究成果
:
Article
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同行評審
3
引文 斯高帕斯(Scopus)
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深入研究「Effects of high-resistivity, low-temperature layer in transient capacitance measurements of GaAs n-i-p structures」主題。共同形成了獨特的指紋。
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Keyphrases
Low Temperature
100%
Gallium Arsenide
100%
Ni-P
100%
High Resistivity
100%
Capacitance Measurement
100%
Transient Capacitance
100%
Activation Energy
50%
Equivalent Circuit
50%
Diode
25%
Emission Processes
25%
Deep Level Transient Spectroscopy
25%
Capacitance Model
25%
Frequency Spectrum
25%
Capacitance Variable Time
25%
Molecular Beam
25%
Circuit-based
25%
Epitaxially Grown
25%
Resistivity Value
25%
Capacitance-frequency
25%
Constant Energy
25%
Intrinsic Region
25%
Capture Process
25%
Engineering
Gallium Arsenide
100%
Low-Temperature
100%
Transients
100%
Capacitance Measurement
100%
Constant Time
40%
Activation Energy
40%
Equivalent Circuit
40%
Experimental Result
20%
Frequency Spectrum
20%
Deep Level
20%
Material Science
Electrical Resistivity
100%
Gallium Arsenide
100%
Capacitance
100%
Capacitance Measurement
100%
Electronic Circuit
66%
Activation Energy
66%
Deep-Level Transient Spectroscopy
33%
Chemistry
Capacitance Measurement
100%
Reaction Activation Energy
66%
Molecular Beam
33%
Deep Level Transient Spectroscopy
33%
Chemical Engineering
Capacitance Measurement
100%