Effects of Ga 2 O 3 deposition power on electrical properties of cosputtered In-Ga-Zn-O semiconductor films and thin-film transistors

Yih Shing Lee*, Chih Hsiang Chang, Yuan Che Lin, Rong Jhe Lyu, Horng-Chih Lin, Tiao Yuan Huang

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this study, we have successfully fabricated In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) with various Ga2O3 deposition powers prepared using a two radio-frequency (RF) (ceramics targets: In 2O3 and Ga2O3) and one direct-current (DC) (metallic target: Zn) magnetron cosputtering system at room temperature. The carrier concentration for the IGZO films decreases to less than 3 × 1016 cm-3 when the Ga2O3 deposition power is 175 W and Hall mobility decreases from 12.8 cm2 V-1 s-1 and saturates at 4.6 cm2 V-1 s-1 with increasing Ga2O3 deposition power. The increase in the resistivity of the cosputtered films correlates with the decrease in the crystallinity of the InGaZn7O10 phase and the phase transformation from InGaZn7O10 to InGaZn 2O5 with increasing Ga2O3 deposition power. With an optimum Ga2O3 deposition power of 150W, cosputtered IGZO TFTs with a higher, saturated drain current of 4.5 μA, good saturation mobility, μsat of 4.92 cm2 V-1 s-1, Ion/Ioff of 109, a low subthreshold swing (SS) of 0.27V/decade, and RSD of 30kΩ have been successfully fabricated.

原文English
文章編號05HA02
期刊Japanese journal of applied physics
53
發行號5 SPEC. ISSUE 3
DOIs
出版狀態Published - 5月 2014

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