Effects of fluorine-implanted treatment on Ba0.7Sr0.3TiO3 films

Ray-Hua Horng*, D. S. Wuu, C. C. Leu, S. H. Chan, T. Y. Huang, S. M. Sze

*此作品的通信作者

研究成果: Article同行評審

摘要

The effects of F-ion implantation on the leakage and dielectric properties of the Ba0.7Sr0.3TiO3 (BST) films were investigated. The BST film implanted with 1 × 1015 cm-2 shows the optimum leakage performance. The leakage current density can be decreased by one order of magnitude as compared to that of the non-implanted sample at an applied voltage of 2 V. On increasing the implanted dose from 5 × 1014 to 5 × 1015 cm-2, the dielectric constant first increases and then decreases due to the deteriorated crystallinity. It is found that the suitable F-ion dose can reduce the -OH contaminants and improve the dielectric and leakage properties.

原文English
頁(從 - 到)667-670
頁數4
期刊Microelectronics Reliability
40
發行號4-5
DOIs
出版狀態Published - 1 4月 2000

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