Effects of ex situ annealing on electrical characteristics of p-n-p AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistors

Pei-Wen Li*, N. Y. Li, H. Q. Hou

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We report the effects of postgrowth annealing on the DC characteristics of p-n-p Al0.3Ga0.7As/In0.03Ga0.97As0.99N0.01/GaAs (AlGaAs/InGaAsN/GaAs) double heterojunction bipolar transistors (DHBTs). The DC electrical characteristics of p-n-p AlGaAs/InGaAsN/GaAs DHBTs with postgrowth anneal are inferior to those of DHBTs without anneal. We found that the current gain decreases by a factor of two and the offset voltage and saturation voltage increase slightly, which indicate that the electrical properties of AlGaAs/InGaAsN/GaAs DHBTs could not be improved by postgrowth anneal treatment. We believe that the compensation effect on the crystalline quality of ex situ thermally annealed n-type InGaAsN base layer is the main factor for degraded DC characteristics of AlGaAs/InGaAsN/GaAs DHBTs.

原文English
頁(從 - 到)1169-1172
頁數4
期刊Solid-State Electronics
44
發行號7
DOIs
出版狀態Published - 1 7月 2000

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