Effects of Drain Field Plate Structure and Passivation Dielectrics on Breakdown Voltage of GaN MISHEMT

Catherine Langpoklakpam*, Yi Kai Hsiao, Chun Hsiung Lin, Hao Chung Kuo

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this work, a novel D-mode GaN MISHEMT with two steps drain field plate is proposed. The designed two steps drain field plate modulates the high electric field at the drain side by spreading the electric field across the two field plates of the device thus enhancing the breakdown voltage of the device. The breakdown voltage of the device is about 1587V which is 350V more than that of the conventional GaN MISHEMT. Furthermore, it is worth noting that the adoption of the proposed design shows minimal impact on the DC characteristics of the device, ensuring its overall performance remains largely unaffected. In addition, by using high-k passivation layers the breakdown of the conventional device is improved by 20.6 % by using HfO2 and reduced by S.4 % by using SiO2 when compared with the SiN passivation layer.

原文English
主出版物標題WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350337112
DOIs
出版狀態Published - 2023
事件2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 - Hsinchu, Taiwan
持續時間: 27 8月 202329 8月 2023

出版系列

名字WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023
國家/地區Taiwan
城市Hsinchu
期間27/08/2329/08/23

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