Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films

Shiu Jen Liu*, Shih Hao Su, Hau Wei Fang, Jang Hsing Hsieh, Jenh-Yih Juang

*此作品的通信作者

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

Amorphous thin films of InGaZnO 4 (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 °C and 150 °C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism.

原文English
頁(從 - 到)10018-10021
頁數4
期刊Applied Surface Science
257
發行號23
DOIs
出版狀態Published - 15 九月 2011

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