Effects of compressive epitaxial strain on the magnetotransport properties of single-phase electron-doped La0.7Ce0.3MnO3 films

W. J. Chang; C. C. Hsieh; Jenh-Yih Juang; Kaung-Hsiung Wu; T. M. Uen; Y. S. Gou; C. H. Hsu; Jiunn-Yuan Lin

doi:10.1063/1.1792808

Effects of compressive epitaxial strain on the magnetotransport properties of single-phase electron-doped La_0.7Ce_0.3MnO₃ films

W. J. Chang^*, C. C. Hsieh, Jenh-Yih Juang, Kaung-Hsiung Wu, T. M. Uen, Y. S. Gou, C. H. Hsu, Jiunn-Yuan Lin

^*此作品的通信作者

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

摘要

Pulsed laser deposition was used for the preparation of single-phase electron-doped manganite thin films with nominal composition of La _0.7Ce_0.3MnO₀ (LCeMO) on SrTiO₃ (100) substrates. In situ post deposition annealing was done to relax the possible epitaxial in-plane tensile strain between the film and the substrate. This leads to an increasing c-axis lattice constant accompanied by the formation of secondary CeO₂ phase and higher metal-insulator transition temperature. The result is indicative of a strong coupling between the electron and lattice degree of freedom.

原文	English
頁（從 - 到）	4357-4361
頁數	5
期刊	Journal of Applied Physics
卷	96
發行號	8
DOIs	https://doi.org/10.1063/1.1792808
出版狀態	Published - 15 10月 2004

存取文件

10.1063/1.1792808

其它文件與鏈接

Link to publication in Scopus

引用此

@article{52b50bc94b8040aaa24efacc88f7202e,

title = "Effects of compressive epitaxial strain on the magnetotransport properties of single-phase electron-doped La0.7Ce0.3MnO3 films",

abstract = "Pulsed laser deposition was used for the preparation of single-phase electron-doped manganite thin films with nominal composition of La 0.7Ce0.3MnO0 (LCeMO) on SrTiO3 (100) substrates. In situ post deposition annealing was done to relax the possible epitaxial in-plane tensile strain between the film and the substrate. This leads to an increasing c-axis lattice constant accompanied by the formation of secondary CeO2 phase and higher metal-insulator transition temperature. The result is indicative of a strong coupling between the electron and lattice degree of freedom.",

author = "Chang, {W. J.} and Hsieh, {C. C.} and Jenh-Yih Juang and Kaung-Hsiung Wu and Uen, {T. M.} and Gou, {Y. S.} and Hsu, {C. H.} and Jiunn-Yuan Lin",

year = "2004",

month = oct,

day = "15",

doi = "10.1063/1.1792808",

language = "English",

volume = "96",

pages = "4357--4361",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Effects of compressive epitaxial strain on the magnetotransport properties of single-phase electron-doped La0.7Ce0.3MnO3 films

AU - Chang, W. J.

AU - Hsieh, C. C.

AU - Juang, Jenh-Yih

AU - Wu, Kaung-Hsiung

AU - Uen, T. M.

AU - Gou, Y. S.

AU - Hsu, C. H.

AU - Lin, Jiunn-Yuan

PY - 2004/10/15

Y1 - 2004/10/15

N2 - Pulsed laser deposition was used for the preparation of single-phase electron-doped manganite thin films with nominal composition of La 0.7Ce0.3MnO0 (LCeMO) on SrTiO3 (100) substrates. In situ post deposition annealing was done to relax the possible epitaxial in-plane tensile strain between the film and the substrate. This leads to an increasing c-axis lattice constant accompanied by the formation of secondary CeO2 phase and higher metal-insulator transition temperature. The result is indicative of a strong coupling between the electron and lattice degree of freedom.

AB - Pulsed laser deposition was used for the preparation of single-phase electron-doped manganite thin films with nominal composition of La 0.7Ce0.3MnO0 (LCeMO) on SrTiO3 (100) substrates. In situ post deposition annealing was done to relax the possible epitaxial in-plane tensile strain between the film and the substrate. This leads to an increasing c-axis lattice constant accompanied by the formation of secondary CeO2 phase and higher metal-insulator transition temperature. The result is indicative of a strong coupling between the electron and lattice degree of freedom.

UR - http://www.scopus.com/inward/record.url?scp=7544240473&partnerID=8YFLogxK

U2 - 10.1063/1.1792808

DO - 10.1063/1.1792808

M3 - Article

AN - SCOPUS:7544240473

VL - 96

SP - 4357

EP - 4361

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

ER -

Effects of compressive epitaxial strain on the magnetotransport properties of single-phase electron-doped La0.7Ce0.3MnO3 films

摘要

存取文件

其它文件與鏈接

指紋

引用此

Effects of compressive epitaxial strain on the magnetotransport properties of single-phase electron-doped La_0.7Ce_0.3MnO₃ films