Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels

Yung Chun Wu; Ting Chang Chang; Po-Tsun Liu; Chi Shen Chen; Chun Hao Tu; Hsiao-Wen Zan; Ya-Hsiang Tai; Chun Yen Chang

doi:10.1109/TED.2005.856797

Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels

Yung Chun Wu^*, Ting Chang Chang, Po-Tsun Liu, Chi Shen Chen, Chun Hao Tu, Hsiao-Wen Zan, Ya-Hsiang Tai, Chun Yen Chang

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

23 引文斯高帕斯（Scopus）

摘要

This brief studies the electrical characteristics of a series of polysilicon thin-film transistors (poly-Si TFTs) with different numbers of multiple channels of various widths, with lightly doped drain (LDD) structures. The nanoscale TFT with ten 67-nm-wide split channels (M10) has superior and more uniform electrical characteristics than other TFTs. Additionally, experimental results reveal that the electrical performance of proposed TFTs enhances with each channel width decreasing, yielding a profile from a single-gate to tri-gate structure.

原文	English
頁（從 - 到）	2343-2346
頁數	4
期刊	IEEE Transactions on Electron Devices
卷	52
發行號	10
DOIs	https://doi.org/10.1109/TED.2005.856797
出版狀態	Published - 10月 2005

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10.1109/TED.2005.856797

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abstract = "This brief studies the electrical characteristics of a series of polysilicon thin-film transistors (poly-Si TFTs) with different numbers of multiple channels of various widths, with lightly doped drain (LDD) structures. The nanoscale TFT with ten 67-nm-wide split channels (M10) has superior and more uniform electrical characteristics than other TFTs. Additionally, experimental results reveal that the electrical performance of proposed TFTs enhances with each channel width decreasing, yielding a profile from a single-gate to tri-gate structure.",

keywords = "Lightly doped drain (LDD), Nanowire, Polysilicon, Thin-film transistor (TFT)",

author = "Wu, {Yung Chun} and Chang, {Ting Chang} and Po-Tsun Liu and Chen, {Chi Shen} and Tu, {Chun Hao} and Hsiao-Wen Zan and Ya-Hsiang Tai and Chang, {Chun Yen}",

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AU - Wu, Yung Chun

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Chen, Chi Shen

AU - Tu, Chun Hao

AU - Zan, Hsiao-Wen

AU - Tai, Ya-Hsiang

AU - Chang, Chun Yen

PY - 2005/10

Y1 - 2005/10

N2 - This brief studies the electrical characteristics of a series of polysilicon thin-film transistors (poly-Si TFTs) with different numbers of multiple channels of various widths, with lightly doped drain (LDD) structures. The nanoscale TFT with ten 67-nm-wide split channels (M10) has superior and more uniform electrical characteristics than other TFTs. Additionally, experimental results reveal that the electrical performance of proposed TFTs enhances with each channel width decreasing, yielding a profile from a single-gate to tri-gate structure.

AB - This brief studies the electrical characteristics of a series of polysilicon thin-film transistors (poly-Si TFTs) with different numbers of multiple channels of various widths, with lightly doped drain (LDD) structures. The nanoscale TFT with ten 67-nm-wide split channels (M10) has superior and more uniform electrical characteristics than other TFTs. Additionally, experimental results reveal that the electrical performance of proposed TFTs enhances with each channel width decreasing, yielding a profile from a single-gate to tri-gate structure.

KW - Lightly doped drain (LDD)

KW - Nanowire

KW - Polysilicon

KW - Thin-film transistor (TFT)

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DO - 10.1109/TED.2005.856797

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VL - 52

SP - 2343

EP - 2346

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels

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