Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels

C. K. Lee, P. H. Yu, Y. J. Ye, P. W. Li, K. M. Chen, G. W. Huang, H. C. Lin*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

The booming of IoT era has given rise to many revolutionary changes in our daily lives with new applications in family houses, healthcare, agriculture, and autonomous vehicles, just to name a few [1] [2]. In these emerging applications, various IoT communication protocols enable all of the connected objects to talk and interact. In this regard, Si-based RF technologies (e.g., bulk CMOS, SOI and SiGe HBT) are essential for the thriving IoT industry. However, it is difficult to co-integrate the Si-based RF components with IoT terminal products. To address these issues, exploitation of an appropriate fabrication scheme is needed.

原文English
主出版物標題2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665409230
DOIs
出版狀態Published - 2022
事件2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan
持續時間: 18 4月 202221 4月 2022

出版系列

名字2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
國家/地區Taiwan
城市Hsinchu
期間18/04/2221/04/22

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