Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels

C. K. Lee; P. H. Yu; Y. J. Ye; P. W. Li; K. M. Chen; G. W. Huang; H. C. Lin

doi:10.1109/VLSI-TSA54299.2022.9771027

Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels

C. K. Lee, P. H. Yu, Y. J. Ye, P. W. Li, K. M. Chen, G. W. Huang, H. C. Lin^*

^*此作品的通信作者

電子研究所

研究成果: Conference contribution › 同行評審

摘要

The booming of IoT era has given rise to many revolutionary changes in our daily lives with new applications in family houses, healthcare, agriculture, and autonomous vehicles, just to name a few [1] [2]. In these emerging applications, various IoT communication protocols enable all of the connected objects to talk and interact. In this regard, Si-based RF technologies (e.g., bulk CMOS, SOI and SiGe HBT) are essential for the thriving IoT industry. However, it is difficult to co-integrate the Si-based RF components with IoT terminal products. To address these issues, exploitation of an appropriate fabrication scheme is needed.

原文	English
主出版物標題	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781665409230
DOIs	https://doi.org/10.1109/VLSI-TSA54299.2022.9771027
出版狀態	Published - 2022
事件	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, 台灣持續時間: 18 4月 2022 → 21 4月 2022

出版系列

名字	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
國家/地區	台灣
城市	Hsinchu
期間	18/04/22 → 21/04/22

存取文件

10.1109/VLSI-TSA54299.2022.9771027

其它文件與鏈接

Link to publication in Scopus

引用此

Lee, C. K., Yu, P. H., Ye, Y. J., Li, P. W., Chen, K. M., Huang, G. W., & Lin, H. C. (2022). Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA54299.2022.9771027

Lee, C. K. ; Yu, P. H. ; Ye, Y. J. 等. / Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

@inproceedings{735f9d6ff863481c8460b59d8955d59c,

title = "Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels",

abstract = "The booming of IoT era has given rise to many revolutionary changes in our daily lives with new applications in family houses, healthcare, agriculture, and autonomous vehicles, just to name a few [1] [2]. In these emerging applications, various IoT communication protocols enable all of the connected objects to talk and interact. In this regard, Si-based RF technologies (e.g., bulk CMOS, SOI and SiGe HBT) are essential for the thriving IoT industry. However, it is difficult to co-integrate the Si-based RF components with IoT terminal products. To address these issues, exploitation of an appropriate fabrication scheme is needed.",

author = "Lee, {C. K.} and Yu, {P. H.} and Ye, {Y. J.} and Li, {P. W.} and Chen, {K. M.} and Huang, {G. W.} and Lin, {H. C.}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 ; Conference date: 18-04-2022 Through 21-04-2022",

year = "2022",

doi = "10.1109/VLSI-TSA54299.2022.9771027",

language = "English",

series = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

address = "美國",

}

Lee, CK, Yu, PH, Ye, YJ, Li, PW, Chen, KM, Huang, GW & Lin, HC 2022, Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Institute of Electrical and Electronics Engineers Inc., 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Hsinchu, 台灣, 18/04/22. https://doi.org/10.1109/VLSI-TSA54299.2022.9771027

Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels. / Lee, C. K.; Yu, P. H.; Ye, Y. J. 等.
2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels

AU - Lee, C. K.

AU - Yu, P. H.

AU - Ye, Y. J.

AU - Li, P. W.

AU - Chen, K. M.

AU - Huang, G. W.

AU - Lin, H. C.

PY - 2022

Y1 - 2022

N2 - The booming of IoT era has given rise to many revolutionary changes in our daily lives with new applications in family houses, healthcare, agriculture, and autonomous vehicles, just to name a few [1] [2]. In these emerging applications, various IoT communication protocols enable all of the connected objects to talk and interact. In this regard, Si-based RF technologies (e.g., bulk CMOS, SOI and SiGe HBT) are essential for the thriving IoT industry. However, it is difficult to co-integrate the Si-based RF components with IoT terminal products. To address these issues, exploitation of an appropriate fabrication scheme is needed.

AB - The booming of IoT era has given rise to many revolutionary changes in our daily lives with new applications in family houses, healthcare, agriculture, and autonomous vehicles, just to name a few [1] [2]. In these emerging applications, various IoT communication protocols enable all of the connected objects to talk and interact. In this regard, Si-based RF technologies (e.g., bulk CMOS, SOI and SiGe HBT) are essential for the thriving IoT industry. However, it is difficult to co-integrate the Si-based RF components with IoT terminal products. To address these issues, exploitation of an appropriate fabrication scheme is needed.

UR - http://www.scopus.com/inward/record.url?scp=85130441203&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA54299.2022.9771027

DO - 10.1109/VLSI-TSA54299.2022.9771027

M3 - Conference contribution

AN - SCOPUS:85130441203

T3 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

BT - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Y2 - 18 April 2022 through 21 April 2022

ER -

Lee CK, Yu PH, Ye YJ, Li PW, Chen KM, Huang GW 等. Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). doi: 10.1109/VLSI-TSA54299.2022.9771027

Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels

摘要

出版系列

Conference

存取文件

其它文件與鏈接

指紋

引用此