Effects of base oxide in HfSiO/SiO2 high-k gate stacks

W. H. Wu*, M. C. Chen, M. F. Wang, Tuo-Hung Hou, L. G. Yao, Y. Jin, S. C. Chen, M. S. Liang

*此作品的通信作者

研究成果: Paper同行評審

2 引文 斯高帕斯(Scopus)

摘要

Electrical characteristics of HfSiO/SiO2 high-k gate stacks have been extensively explored with regard to the effects of base oxide. The flatband voltage shift in N/PMOS capacitors is independent of base oxide thickness, and the dielectric breakdown of the gate stacks is determined by base oxide. In addition, base oxide thickness has a great impact on device performance and charge trapping, presumably due to remote Coulomb scattering (RCS) in the HfSiO bulk layer and direct tunneling through the base oxide. Threshold voltage instability induced by charge trapping will be a major reliability concern for Hf-based high-k gate dielectrics in the future.

原文English
頁面25-28
頁數4
出版狀態Published - 2004
事件Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan
持續時間: 5 7月 20048 7月 2004

Conference

ConferenceProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
國家/地區Taiwan
期間5/07/048/07/04

指紋

深入研究「Effects of base oxide in HfSiO/SiO2 high-k gate stacks」主題。共同形成了獨特的指紋。

引用此