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Effects of backchannel passivation on electrical behavior of hetero-stacked A-IWO/IgZO thin film transistors
Po Tsun Liu
*
, Chih Hsiang Chang, Po Yi Kuo, Po Wen Chen
*
此作品的通信作者
光電工程學系
研究成果
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引文 斯高帕斯(Scopus)
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深入研究「Effects of backchannel passivation on electrical behavior of hetero-stacked A-IWO/IgZO thin film transistors」主題。共同形成了獨特的指紋。
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Keyphrases
Al2O3 Film
33%
Al2O3 Passivation Layer
33%
Amorphous InGaZnO (a-IGZO)
33%
Backchannel
100%
Behavioral Model
33%
Bias Instability
33%
Degradation Behavior
33%
Electrical Behavior
100%
Electrical Degradation
33%
Electrical Instability
33%
Electron Traps
33%
Hetero
100%
InGaZnO Thin-film Transistors
66%
Moisture Absorption
33%
Passivation
100%
Passivation Layer
33%
Positive Bias
33%
Positive Gate Bias Stress
66%
SiO2 Film
33%
SiO2 Passivation Layer
66%
Thin-film Transistors
100%
Threshold Voltage
33%
Vth Shift
66%
Engineering
Gate Bias
40%
Moisture Absorption
20%
Passivation
100%
Passivation Layer
80%
Silicon Dioxide
60%
Thin-Film Transistor
100%
Immunology and Microbiology
Absorption
100%
Back
100%
Electric Potential
100%
Computer Science
Behavior Model
100%
Threshold Voltage
100%
Material Science
Al2O3
40%
Film
20%
Thin-Film Transistor
100%
Earth and Planetary Sciences
Thin Films
100%
Threshold Voltage
20%