Effects of backchannel passivation on electrical behavior of hetero-stacked A-IWO/IgZO thin film transistors

Po Tsun Liu; Chih Hsiang Chang; Po Yi Kuo; Po Wen Chen

doi:10.1149/2.0221802jss

Effects of backchannel passivation on electrical behavior of hetero-stacked A-IWO/IgZO thin film transistors

Po Tsun Liu^*, Chih Hsiang Chang, Po Yi Kuo, Po Wen Chen

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

This study investigates the effects of positive gate-bias stress (PGBS) on the electrical instability of amorphous InWO/InGaZnO (a-IWO/IGZO) stacked thin-film transistors (TFTs) with a backchannel passivation layer of SiO₂ or Al₂O₃ film. After the application of PGBS to a-IWO/IGZO TFTs with an SiO₂ passivation layer, abnormal negative threshold voltage (V_th) shifts were observed, while positive V_th shifts were observed in the TFTs with an Al₂O₃ passivation layer. This unusual positive bias instability is explained using a two-step electrical degradation behavior model, including both electron trapping and moisture absorption at the damaged back channel interface between a-IWO/IGZO TFTs and the SiO₂ passivation layer.

原文	English
頁（從 - 到）	Q17-Q20
期刊	ECS Journal of Solid State Science and Technology
卷	7
發行號	3
DOIs	https://doi.org/10.1149/2.0221802jss
出版狀態	Published - 1月 2018

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title = "Effects of backchannel passivation on electrical behavior of hetero-stacked A-IWO/IgZO thin film transistors",

abstract = "This study investigates the effects of positive gate-bias stress (PGBS) on the electrical instability of amorphous InWO/InGaZnO (a-IWO/IGZO) stacked thin-film transistors (TFTs) with a backchannel passivation layer of SiO2 or Al2O3 film. After the application of PGBS to a-IWO/IGZO TFTs with an SiO2 passivation layer, abnormal negative threshold voltage (Vth) shifts were observed, while positive Vth shifts were observed in the TFTs with an Al2O3 passivation layer. This unusual positive bias instability is explained using a two-step electrical degradation behavior model, including both electron trapping and moisture absorption at the damaged back channel interface between a-IWO/IGZO TFTs and the SiO2 passivation layer.",

author = "Liu, {Po Tsun} and Chang, {Chih Hsiang} and Kuo, {Po Yi} and Chen, {Po Wen}",

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doi = "10.1149/2.0221802jss",

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AU - Chen, Po Wen

PY - 2018/1

Y1 - 2018/1

N2 - This study investigates the effects of positive gate-bias stress (PGBS) on the electrical instability of amorphous InWO/InGaZnO (a-IWO/IGZO) stacked thin-film transistors (TFTs) with a backchannel passivation layer of SiO2 or Al2O3 film. After the application of PGBS to a-IWO/IGZO TFTs with an SiO2 passivation layer, abnormal negative threshold voltage (Vth) shifts were observed, while positive Vth shifts were observed in the TFTs with an Al2O3 passivation layer. This unusual positive bias instability is explained using a two-step electrical degradation behavior model, including both electron trapping and moisture absorption at the damaged back channel interface between a-IWO/IGZO TFTs and the SiO2 passivation layer.

AB - This study investigates the effects of positive gate-bias stress (PGBS) on the electrical instability of amorphous InWO/InGaZnO (a-IWO/IGZO) stacked thin-film transistors (TFTs) with a backchannel passivation layer of SiO2 or Al2O3 film. After the application of PGBS to a-IWO/IGZO TFTs with an SiO2 passivation layer, abnormal negative threshold voltage (Vth) shifts were observed, while positive Vth shifts were observed in the TFTs with an Al2O3 passivation layer. This unusual positive bias instability is explained using a two-step electrical degradation behavior model, including both electron trapping and moisture absorption at the damaged back channel interface between a-IWO/IGZO TFTs and the SiO2 passivation layer.

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Effects of backchannel passivation on electrical behavior of hetero-stacked A-IWO/IgZO thin film transistors

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