EFFECTS OF AVALANCHE INJECTION CURRENTS ON THE ENDURANCE OF Si MOS DEVICES.

Chih Tang Sah^*, Jach Yuan Chen Sun, Josheph Jeng Tao Tzou

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研究成果: Conference article › 同行評審

2 引文斯高帕斯（Scopus）

原文	English
頁（從 - 到）	753
頁數	1
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/iedm.1982.190404
出版狀態	Published - 1982

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title = "EFFECTS OF AVALANCHE INJECTION CURRENTS ON THE ENDURANCE OF Si MOS DEVICES.",

author = "Sah, {Chih Tang} and Sun, {Jach Yuan Chen} and Tzou, {Josheph Jeng Tao}",

year = "1982",

doi = "10.1109/iedm.1982.190404",

language = "English",

pages = "753",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - EFFECTS OF AVALANCHE INJECTION CURRENTS ON THE ENDURANCE OF Si MOS DEVICES.

AU - Sah, Chih Tang

AU - Sun, Jach Yuan Chen

AU - Tzou, Josheph Jeng Tao

PY - 1982

Y1 - 1982

UR - http://www.scopus.com/inward/record.url?scp=0020289055&partnerID=8YFLogxK

U2 - 10.1109/iedm.1982.190404

DO - 10.1109/iedm.1982.190404

M3 - Conference article

AN - SCOPUS:0020289055

SN - 0163-1918

SP - 753

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

ER -